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Asymmetries in Amorphous Silicon Devices

Published online by Cambridge University Press:  28 February 2011

Z E. Smith  and
S. Wagner
Z E. Smith
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
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Abstract

The consequences of the asymmetries in the density of electronic states of hydrogenated amorphous silicon on the behavior of electronic devices are discussed. Asymmetries in the relative widths of valence and conduction bandtails, the position of the dangling-bond states within the gap, and the occupation statistics of non-correlated defects are shown to affect the performance of p-i-n solar cells, and explain their superior performance and stability when compared with such devices illuminated through the n-layer (n-i-p). The device-modeling concepts which emerge help explain the differences between cell degradation via light exposure under various bias conditions, and cell degradation by dark forward bias.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 525
Copyright
Copyright © Materials Research Society 1986

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References

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