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a-Si and μc-Si Grown from SiF4 with High H2 Dilution in a DC Glow Discharge

Published online by Cambridge University Press:  25 February 2011

Y. Okada ,
J. Chen ,
I. H. Campbell ,
P. M. Fauchet  and
S. Wagner
Y. Okada
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, New Jersey 08544
J. Chen
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, New Jersey 08544
I. H. Campbell
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, New Jersey 08544
P. M. Fauchet
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, New Jersey 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, New Jersey 08544
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Abstract

a-Si and μc-Si were grown from SiF4 with H2 dilution in a DC glow discharge. The crystallinity of films deposited over a range of substrate temperatures and SiF4/H2 flow ratios was studied by Raman spectroscopy and the boundary between microcrystalline and amorphous Si was determined. We find that μc-Si can be grown from SiF4 with less H2 dilution than from SiH4. In the SiF4/H2 system, the etching by of F atoms appears responsible for μc-growth; H atoms play an important role in balancing growth and etching reactions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 93
Copyright
Copyright © Materials Research Society 1989

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References

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