Hostname: page-component-848d4c4894-xm8r8 Total loading time: 0 Render date: 2024-06-24T15:42:30.160Z Has data issue: false hasContentIssue false
  • English
  • Français

ArF Laser Induced Photochemical Substitution of OH Radicals into Teflon Surface Using Al(OH)3 Solution

Published online by Cambridge University Press:  25 February 2011

M. Okoshi ,
H. Kashiura ,
T. Miyokawa ,
K. Toyoda  and
M. Murahara
M. Okoshi
Affiliation:
Graduate Student of Faculty Engineering, Tokai University
H. Kashiura
Affiliation:
Graduate Student of Faculty Engineering, Tokai University
T. Miyokawa
Affiliation:
Graduate Student of Faculty Engineering, Tokai University
K. Toyoda
Affiliation:
Graduate Student of Faculty Engineering, Tokai University
M. Murahara
Affiliation:
Graduate Student of Faculty Engineering, Tokai University
Get access

Abstract

OH radicals were photochemically substituted for fluorine atoms in the teflon surface by using an ArF excimer laser light and an Al(OH)3 solution. This method is simple and can be performed in air atmosphere. In the process, the teflon film was placed on the Al(OH)3 which were dissolved in NaOH water solution; the ArF excimer laser light was irradiated the sample surface and the solution. By irradiating the laser, the surface was defluorinated by the aluminium atoms photodissociated from the Al(OH)3 solution, and the dangling bonds which were formed in the defluorinated surface combined with the OH radicals also photodissociated. The hydrophilic property of the photomodified surface was evaluated by the measurement of the contact angle with water. The defluorination and the OH radicals substitution were inspected by the XPS analysis and the ATR-FTIR measurement.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 737
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Murahara, M., Kawamura, Y., Toyoda, K. and Numba, S., Ohyo Butsuri, 52, 83 (1983)Google Scholar
2 Srinivasan, R. and Leigh, W. J., J. Am. Chem. Soc., 104, 6784(1982)CrossRefGoogle Scholar
3 Gorodetsky, G., Kazyaka, T. G., Melcher, R. L. and Srinivasan, R., Appl. Phys. Lett., 46(9), 828(1985)Google Scholar
4 Dyer, P. E. and Sidhu, J., J. Appl Phys., 57(4), 1420(1985)Google Scholar
5 Küper, S. and Stuke, M., Appl Phys. Lett. 54(1), 4(1989)Google Scholar
6 Okoshi, M., Murahara, M. and Toyoda, K., Mat. Res. Soc. Symp. Proc., Vol. 158, 33(1990)CrossRefGoogle Scholar
7 Okoshi, M., Murahara, M. and Toyoda, K., Mat. Res. Soc. Symp. Proc., Vol. 201, 451(1991)Google Scholar
8 Okoshi, M., Murahara, M. and Toyoda, K., Mat. Res. Soc. Symp. Proc., Vol. 236, 377 (1992)CrossRefGoogle Scholar
9 Okoshi, M., Murahara, M. and Toyoda, K., J. Mater. Res., Vol. 7, No. 7, 1912 (1992)CrossRefGoogle Scholar
10 Nelson, E. R., Kilduff, T. J. and Benderly, A. A., Ind. Eng. Chem., 50, 329 (1958)Google Scholar
11 Soukup, L., Int. Polym. Sci. Technol., 5, No. 9, 19(1978)Google Scholar
12 Okoshi, M., Toyoda, K. and Murahara, M., IQEC'92, PTh111, 498(1992)Google Scholar