Hostname: page-component-848d4c4894-v5vhk Total loading time: 0 Render date: 2024-07-02T05:40:40.636Z Has data issue: false hasContentIssue false
  • English
  • Français

Applications of Solid Phase Doping in Manufacturing MOS Devices

Published online by Cambridge University Press:  21 February 2011

S. F. Gong ,
H. T. G. Hentzell  and
A. Robertsson
S. F. Gong
Affiliation:
Department of Physics and Measurement Technology, University of Linkoping, S-581 83 Sweden
H. T. G. Hentzell
Affiliation:
Department of Physics and Measurement Technology, University of Linkoping, S-581 83 Sweden
A. Robertsson
Affiliation:
Department of Physics and Measurement Technology, University of Linkoping, S-581 83 Sweden
Get access

Abstract

Solid phase doping from Sb heavily-doped Si films has been studied by using transmission electron microscopy and secondary ion mass spectroscopy. Based on the results of the material study, metal-oxidesemiconductor field effect transistors (MOSFETs) made on a (100) Si wafer, and thin film transistors have been implemented. The technique for the MOSFETs suggests the possibility for making small dimensional and high speed integrated circuits by using the method of solid phase doping.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 182: Symposium C – Polysilicon Thin Films and Interfaces , 1990 , 147
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

(1) For example, Schaber, H., Criegern, R. V., and Weitzel, I., J. Appl. Phys. 58, 4036 (1985).Google Scholar
(2) For example, Kamins, T., Polycrystalline Silicon for Integrated Circuit Applications (Kluwer Academic publishers, Boston, 1988), p. 220.Google Scholar
(3) Soerowirdjo, B. and Ashburn, P., Solid-State Electron. 26, 495 (1983).Google Scholar