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Application of Thin-Film Amorphous Silicon to Chemical Imaging

Published online by Cambridge University Press:  01 February 2011

Tatsuo Yoshinobu ,
Werner Moritz ,
Friedhelm Finger  and
Michael J. Schoening
Tatsuo Yoshinobu
Affiliation:
nov@ecei.tohoku.ac.jp, Tohoku University, Department of Electronic Engineering, 6-6-05 Aza-Aoba, Aramaki, Aoba-ku, Sendai, Miyagi, 9808579, Japan, +81-22-795-7072, +81-22-795-7076
Werner Moritz
Affiliation:
werner.Moritz@rz.hu-berlin.de, Humboldt University Berlin, Brook-Taylor-Str. 2, Berlin, N/A, 12489, Germany
Friedhelm Finger
Affiliation:
f.finger@fz-juelich.de, Research Centre Juelich, Juelich, N/A, 52425, Germany
Michael J. Schoening
Affiliation:
m.j.schoening@fz-juelich.de, Research Centre Juelich, Juelich, N/A, 52425, Germany
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Abstract

A thin-film amorphous silicon (a-Si) deposited on a glass substrate was employed as a semiconductor material for the chemical imaging sensor, which can visualize the distribution of ion concentration in a solution. The sensing properties and the spatial resolution of the a-Si sensors were investigated. Nearly-Nernstian pH sensitivities and submicron resolution were demonstrated, which suggests the superior performance of the chemical imaging sensor based on thin-film a-Si.

Keywords

sensoramorphousdevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A20-01
Copyright
Copyright © Materials Research Society 2006

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