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The Application of Thick Hydrogenated Amorphous Silicon Layers to Charged Particle and X-Ray Detection

Published online by Cambridge University Press:  25 February 2011

V. Perez-Mendez ,
G. Cho ,
I. Fujieda ,
S. N. Kaplan ,
S. Qureshi  and
R. A. Street
V. Perez-Mendez
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, California 94720
G. Cho
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, California 94720
I. Fujieda
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, California 94720
S. N. Kaplan
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, California 94720
S. Qureshi
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, California 94720
R. A. Street
Affiliation:
Xerox P.A.R.C., Palo Alto, California 94304
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Abstract

We outline the characteristics of thick hydrogdenated amorphous silicon layers which are optimized for the detection of charged particles, x-rays and γ-rays. Signal amplitude as a function of the linear energy transfer of various particles are given. Noise sources generated by the detector material and by the thin film electronics - a-Si:H or polysilicon proposed for pixel position sensitive detectors readout are described, and their relative amplitudes are calculated. Temperature and neutron radiation effects on leakage currents and the corresponding noise changes are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 621
Copyright
Copyright © Materials Research Society 1989

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References

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