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Application of Selective Area MOVPE for DFB Gratings with Modulated Coupling Coefficient

Published online by Cambridge University Press:  22 February 2011

Peer Tidemand-Petersson ,
Ole Albrektsen ,
Anders Møller-Larsen  and
Joseph Salzman
Peer Tidemand-Petersson
Affiliation:
Tele Danmark Research, Lyngs0 A116 2, DK-2970 Horsholm, Denmark
Ole Albrektsen
Affiliation:
Tele Danmark Research, Lyngs0 A116 2, DK-2970 Horsholm, Denmark
Anders Møller-Larsen
Affiliation:
Tele Danmark Research, Lyngs0 A116 2, DK-2970 Horsholm, Denmark
Joseph Salzman
Affiliation:
Tele Danmark Research, Lyngs0 A116 2, DK-2970 Horsholm, Denmark
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Abstract

A new application of selective area metalorganic vapour phase epitaxy is demonstrated: fabrication of distributed feedback (DFB) gratings with sub-micron period and modulated coupling coefficient Kc. A SiO2 mask layer defines the InGaAs(P) grating pattern as well as the lateral variation in growth rate and, hence, thickness of the grating. In this way K can be varied along the laser cavity in a controlled and reproducible manner.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 153
Copyright
Copyright © Materials Research Society 1994

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References

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