Hostname: page-component-77c89778f8-swr86 Total loading time: 0 Render date: 2024-07-16T10:18:51.408Z Has data issue: false hasContentIssue false
  • English
  • Français

Anomalous Transient Diffusion of Ion Implanted Boron during Rapid Thermal Annealing

Published online by Cambridge University Press:  25 February 2011

Y. M. Kim ,
G. Q. Lo ,
D. L. Kwong ,
H. H. Tseng  and
R. Hance
Y. M. Kim
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin TX 78712
G. Q. Lo
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin TX 78712
D. L. Kwong
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin TX 78712
H. H. Tseng
Affiliation:
Advanced Products and Research Development Laboratory, Motorola Inc., Austin, TX 78762
R. Hance
Affiliation:
Advanced Products and Research Development Laboratory, Motorola Inc., Austin, TX 78762
Get access

Abstract

Effects of defect evolution during rapid thermal annealing (RTA) on the anomalous diffusion of ion implanted boron have been studied by implanting silicon ions prior to boron implantation with doses ranging from 1 × 1014cm−2 to 1 × 1016cm−2 at energies ranging from 20 to 150 KeV into silicon wafers. Diffusion of boron atoms implanted into a Si preamorphized layer during RTA is found to be anomalous in nature, and the magnitude of boron displacement depends on the RTA temperature. While RTA of preamorphized samples at 1150°C shows an enhanced boron displacement compared to that in crystalline samples, a reduced displacement is observed in preamorphized samples annealed by RTA at 1000°C. In addition, low dose pre-silicon implantation enhances the anomalous displacement significantly, especially at high RTA temperatures (1 150°C). Finally, the anomalous diffusion is found to depend strongly on the defect evolution during RTA.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 391
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Fair, R., IEEE Transactions Electron Devices 35, 285(1988).Google Scholar
2. Orlowski, M., Appl. Phys. Lett. 53, 1323 (1988).Google Scholar
3. Guimaraes, S., Landi, E., and Solmi, S., phys. stat. sol. (a) 95, 589(1986).Google Scholar
4. Armigliato, A., Guimaraes, S., Solmi, S., Kogler, R., and Wieser, E., Nucler Instruments and Methods in Physics Research B19/20, 512(1987).Google Scholar
5. Sedgwick, T. O., Michel, A. E., Deline, V. R., Cohen, S. A., and Lasky, J. B., J. Appl. Phys. 63, 1(1988).Google Scholar
6. Michel, A. E., Rauch, W., Ronsheim, P. A., and Kastl, R. H., Appl. Phys. Lett. 50, 416(1987).Google Scholar
7. Burenkov, A. F., Komarov, F. F., Kumakhov, M. A., and Temkin, M. M., “Tables of Ion Implantation Spatial Distributions,” English Edition(Gordon and Breach, Amsterdam, 1986).Google Scholar
8. Servidori, M., Sourek, Z., and Solmi, S., J. Appl. Phys. 62, 1(1987).Google Scholar