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Anomalous Diffusion of Hydrogen and the Dependence of the Diffusion Constants on Hydrogen Content in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  21 February 2011

R. Shinar ,
H. Jia ,
X.-L. Wu  and
J. Shinar
R. Shinar
Affiliation:
Microelectronics Research Center, Iowa State University, Ames, Iowa 50011
H. Jia
Affiliation:
Ames Laboratory - USDOE and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011
X.-L. Wu
Affiliation:
Ames Laboratory - USDOE and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011
J. Shinar
Affiliation:
Ames Laboratory - USDOE and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011
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Abstract

The diffusion constant of hydrogen DH(t) in hydrogenated amorphous silicon (a-Si:H) is strongly dependent on the Si-bonded H content CH of the films. It increases by over four orders of magnitude for CH ranging from 1 to 19 at. %. In an rf sputter-deposited film of CH ∼5 at. % it increases with time at 300 ≤ T ≤ 362°C. The dispersion parameter α in DH(t) = D∞ (ωt)-αis thus negative. This observation and the increase of α with T above a sample-dependent temperature Tτ are discussed in relation to low temperature structural relaxation processes in the amorphous network.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 419
Copyright
Copyright © Materials Research Society 1992

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References

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