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Anomalous behaviour of stain etched porous silicon photoluminescence

Published online by Cambridge University Press:  01 February 2011

Ricardo Guerrero-Lemus ,
Fathi A. Ben-Hander ,
Cecilio Hernández-Rodríguez  and
José M. Martínez-Duart
Ricardo Guerrero-Lemus
Affiliation:
Dept. Física Básica, Universidad de La Laguna, Av. Astrofísico Francisco Sánchez s/n, 38204 La Laguna, S/C Tenerife, SPAIN.
Fathi A. Ben-Hander
Affiliation:
Dept. Física Aplicada C-XII, Universidad Autónoma de Madrid, 28049 Madrid, SPAIN.
Cecilio Hernández-Rodríguez
Affiliation:
Dept. Física Básica, Universidad de La Laguna, Av. Astrofísico Francisco Sánchez s/n, 38204 La Laguna, S/C Tenerife, SPAIN.
José M. Martínez-Duart
Affiliation:
Dept. Física Aplicada C-XII, Universidad Autónoma de Madrid, 28049 Madrid, SPAIN.
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Abstract

In this work we present a comparative study of porous silicon (PS) photoluminescence for samples stain etched and electrochemically etched. The etching parameters for both types of samples have been adjusted to obtain similar porous structures. The photoluminescence spectra have been obtained varying the excitation energy between 2.48 and 3.54 eV. The variation of the excitation energy produces differences in the evolution of the emission energy maximum between both types of PS. This behaviour is attributable to the differences in oxidation level in the porous structure. Also it has been established a higher concentration of luminescent centers for stain etched PS.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A17.16
Copyright
Copyright © Materials Research Society 2003

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