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Anomalous Behavior of Peak Resistance Temperature for low x in As-Deposited La1-xCaxMnO3 Films on NdGao3 and SrTiO3 Substrates

Published online by Cambridge University Press:  10 February 2011

P. R. Broussard  and
V. C. Cestone
P. R. Broussard
Affiliation:
Code 6342, Naval Research Lab, Washington, DC 20375–5343, phillip.broussard@nrl.navy.mil
V. C. Cestone
Affiliation:
Code 6342, Naval Research Lab, Washington, DC 20375–5343, victor.cestone@nrl.navy.mil
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Abstract

We have grown thin films of La1-xCaxMnO3 using off-axis cosputtering for x ≤ 1/3 onto (001) NdGaO3 and (100) SrTiO3 substrates from individual targets of LaMnO3 and La2/3Ca1/3MnO3. As-deposited films of La2/3Ca1/3MnO3 on NdGaO3 have a peak resistance temperature of ≈ 260 K. We see a difference in the peak temperature between the two types of substrates of ≈ 15 K, with samples on NdGaO3 having higher peak temperatures. As the value of x is reduced from 1/3, the peak resistance temperature decreases until x ≈ 0.15, when the peak temperature has an upturn. Even down to x=0 we still observe a metal-insulator transition (at 185 K) for films on NdGaO3, while samples on SrTiO3 show only activated behavior. We also find a scaling relationship between the peak temperature and the resistivity activation energy of the films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 574: Symposia BB – Multicomponent Oxide Films for Electronics , 1999 , 181
Copyright
Copyright © Materials Research Society 1999

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References

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