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Annealing the Defects in a-Si:H Under Illumination

Published online by Cambridge University Press:  01 January 1993

Helena Gleskova ,
P.A. Morin  and
S. Wagner
Helena Gleskova
Affiliation:
LPICM, Ecole Polytechnique,911 28 Palaiseau CEDEX, France.
P.A. Morin
Affiliation:
On leave from the Department of Solid State Physics, Comenius University, 842 15 Bratislava, Slovakia
S. Wagner
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton , NJ 08544
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Abstract

The results of a study of the kinetics of the light-induced annealing of the deep-level defects in hydrogenated amorphous silicon (a-Si:H) are presented. They show that at elevated temperatures illumination increases the rate of annealing compared to annealing in the dark. We also detected light-induced annealing at room temperature. On the basis of a model in which the defects are generated by electron-hole recombination and annealing occurs through the action of a single carrier, we found values of 0.86 eV for the activation energy of the light-induced generation coefficient γ-1, and 1.23 eV for the light-induced annealing prefactor λ

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 589
Copyright
Copyright © Materials Research Society 1993

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References

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