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Annealing of Radiation Defects in X-Irradiated LiBaF3

Published online by Cambridge University Press:  01 February 2011

Peteris Kulis ,
Uldis Rogulis ,
Maris Springis ,
Ivars Tale ,
Aris Veispals ,
Andis Groza  and
Valters Ziraps
Peteris Kulis
Affiliation:
Institute of Solid State Physics, University of Latvia, 8 Kengaraga, LV-1063, Riga, Latvia
Uldis Rogulis
Affiliation:
Institute of Solid State Physics, University of Latvia, 8 Kengaraga, LV-1063, Riga, Latvia
Maris Springis
Affiliation:
Institute of Solid State Physics, University of Latvia, 8 Kengaraga, LV-1063, Riga, Latvia
Ivars Tale
Affiliation:
Institute of Solid State Physics, University of Latvia, 8 Kengaraga, LV-1063, Riga, Latvia
Aris Veispals
Affiliation:
Institute of Solid State Physics, University of Latvia, 8 Kengaraga, LV-1063, Riga, Latvia
Andis Groza
Affiliation:
Institute of Solid State Physics, University of Latvia, 8 Kengaraga, LV-1063, Riga, Latvia
Valters Ziraps
Affiliation:
Institute of Solid State Physics, University of Latvia, 8 Kengaraga, LV-1063, Riga, Latvia
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Abstract

Results of application of the glow rate technique GRT for analysis of the activation energy of thermostimulated annealing of X-ray created F-type color centers in LiBaF3 crystals, pure and containing hetero-valence oxygen centers are presented. It is shown that depending on impurity composition in crystal two alternative mechanisms are involved in annealing of color centers. It is proposed that either the anion vacancy governed migration of F- centers resulting in recombination with complementary defects, or the thermal delocalization of radiation created fluorine (Fi) interstitials captured by anti-structure defects followed by recombination with all kinds of complementary F- type centers are responsible for the recombination of radiation defects above RT.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 718: Symposium D – Perovskite Materials , 2002 , D4.9
Copyright
Copyright © Materials Research Society 2002

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References

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