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Annealing Effects on Deuterium in a-Si:D.

Published online by Cambridge University Press:  28 February 2011

V. P. Bork ,
P. A. Fedders ,
D. J. Leopold ,
R. E. Norberg ,
J. B. Boycea  and
J. C. Knights
V. P. Bork
Affiliation:
Washington University, St. Louis, Missouri 63130
P. A. Fedders
Affiliation:
Washington University, St. Louis, Missouri 63130
D. J. Leopold
Affiliation:
Washington University, St. Louis, Missouri 63130
R. E. Norberg
Affiliation:
Washington University, St. Louis, Missouri 63130
J. B. Boycea
Affiliation:
Xerox PARC, Palo Alto, California 94304
J. C. Knights
Affiliation:
Xerox PARC, Palo Alto, California 94304
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Abstract

Progressive annealing of a-Si:D and a-Si:DH samples between 250 and 600°C is found to eliminate the broad central deuteron magnetic resonance (DMR) spectral component associated with weakly bonded D. The well-resolved doublet arising from tightly bound D diminishes in intensity. The narrow central line associated with microvoid-contained molecular D2 and HD increases and then decreases for the warmest anneals. DMR relaxation times, line shapes, and hole-burning spectra reflect changes in sample morphology upon annealing.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 89
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1. Leopold, D. J., Fedders, P. A., Norberg, R. E., Boyce, J. B., and Knights, J. C., Phys. Rev. B 31, 5642 (1985).CrossRefGoogle Scholar
2. Fedders, P. A., Fisch, R., and Norberg, R. E., Phys. Rev. B 31, 6887 (1985).CrossRefGoogle Scholar