Hostname: page-component-76fb5796d-2lccl Total loading time: 0 Render date: 2024-04-26T18:05:57.797Z Has data issue: false hasContentIssue false
  • English
  • Français

Anisotropy of Optical and Electron Transport Properties of Atomic Ordering in CdGeAs2

Published online by Cambridge University Press:  10 February 2011

B. H. Bairamov ,
N. Fernelius ,
G. Irmer ,
J. Monecke ,
I. K. Polushina ,
R. Pandey ,
V.Yu. Rud' ,
Yu. V. Rud ,
P.G. Schunemann  and
M.C. Ohmer
B. H. Bairamov
Affiliation:
Department of Solid State Physics, A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021, 26 Polytekhnicheskaya ul., St. Petersburg, Russia, E-mail: bairamov@bahish.ioffe.rssi.ru
N. Fernelius
Affiliation:
Air Force Research Laboratory, AFRL/MLPO, Wright-Patterson AFB 45433, OH, USA
G. Irmer
Affiliation:
Institute of Theoretical Physics, Freiberg University of Mining and Technology, Cottastr. 4, D-09596 Freiberg, Germany
J. Monecke
Affiliation:
Institute of Theoretical Physics, Freiberg University of Mining and Technology, Cottastr. 4, D-09596 Freiberg, Germany
I. K. Polushina
Affiliation:
Department of Solid State Physics, A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021, 26 Polytekhnicheskaya ul., St. Petersburg, Russia
R. Pandey
Affiliation:
Department of Physics, Michigan Technological University
V.Yu. Rud'
Affiliation:
Department of Physics, St. Petersburg State Technical University, 29 Polytekhnicheskaya uL, St. Petersburg 19525 1, Russia
Yu. V. Rud
Affiliation:
Department of Solid State Physics, A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021, 26 Polytekhnicheskaya ul., St. Petersburg, Russia
P.G. Schunemann
Affiliation:
Lockheed Sanders Inc., Nashua, 03061, NH, USA
M.C. Ohmer
Affiliation:
Air Force Research Laboratory, AFRL/MLPO, Wright-Patterson AFB 45433, OH, USA
Get access

Abstract

Inelastic light scattering by optical phonons and the temperature dependent electrical conductivity, Hall constant and photosensitivity were studied in oriented CdGeAs2 crystals grown by ultra-low gradient freeze technique from near-stoichiometric melts. Observation of the clear polarization dependence of the inelastic light scattering spectra by optical phonons combined with the absence of any dependence of the intensity and frequency shift of the observed lines with mapping measurements in 300 μm steps indicated the high optical quality and homogeneity of these single crystals. It is shown that surface-barrier structures using these single crystals may be used as wide-band detectors for natural light, as well as selective photoanalyzers for linearly polarized radiation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 397
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. II-PV-V2 Semiconductors, edited by Goryunova, N. A., and Valov, Yu. A. (in Russian, Sov.Radio, Moscow, 1974).Google Scholar
2. Shay, J. L., and Wernick, J. H., Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications(Pergamon Press, New York, 1975).Google Scholar
3. Wagner, S., Electrolumenscence, Applied Physics,17, edited by Pankove, J. I. (Springer-Verlag, Berlin, 1977) p. 171.Google Scholar
4. Prochukhan, V.D., and Rud', Yu. V., Soy. Phys. Semicond. 12 (1978) p.121, [Fiz. Tekh. Poluprovodn. 12, 209 (1978)].Google Scholar
5. Rud', Yu. V., Izv. Vyssh. Uchebn. Zaved. Fiz. 29 (1986) p. 68.Google Scholar
6. Kesamanly, F. P., and Rud', Yu. V., Semiconductors, 27 (1993) p. 969, [Fiz, Tekh. Poluprovodn. 27, 1761 (1993)].Google Scholar
7. Rud', Yu.V., Semiconductors, 28 (1994) p. 1105, [Fiz. Tekh. Poluprovodn. 28, 633 (1994)].Google Scholar
8. Rud', Yu.V., Semiconductors, 28 (1994) p. 1105, [Fiz. Tekh. Poluprovodn. 28, 633 (1994)].Google Scholar
9. Budni, P. A., Schunemann, P. G., Knights, M. G., Pollak, T. M., and Chicklis, E. P., in: OSA Proceedings of Advanced Solid State Lasers, edited by Chase, L. and Pinto, A.A. (Optical Society of America, 13, Washington, DC, 1992) p. 380.Google Scholar
10. Knights, M. G., Budni, P. A., Schunemann, P. G., Pollak, T. M., and Chicklis, E. P., in: Advanced Solid State Lasers.Technical Digest, 1994 (Optical Society of America, Washington, DC, 1992) p. 259.Google Scholar
11. Ohmer, M., and Pandey, R., MRS Bulletin, 23, (1998) p. 16. P.G. Schunemann, and T.M. Pollak, ibid, p. 23. G. C. Catella, and D. Burlage, ibid, p. 28. N. C. Giles, and L. E. Halliburton, ibid, p. 37. B. H. Bairamov, and V. Yu. Rud', and Yu. V. Rud', ibid, p. 41. P.G. Schunemann, K. L. Schepler, and P. A. Budni, ibid, p. 45.Google Scholar
12. Rud', Yu. V., Jpn. J. Appl. Phys. 32 (1993) p. 512.Google Scholar
13. Bairamov, B. H., Aydinli, A, Bodnar', I V, Rud', Yu V, Negoduyko, V K, Toporov, V V, J. Appl. Physics, 80, 5564–5569, 1996.Google Scholar
14. Hobgood, H. M., Henningsen, T., Thomas, R. N., Hopkins, R. H., Ohmer, M. C., Mitchel, W. C., Fisher, D. W., Hegde, S. M., and Hopkins, F. K., J. Appl. Phys. 73 (1993) p. 4030.Google Scholar
15. McCrae, J. E., Gregg, M. R., Hengehold, R. L., Yeo, Y. K., Ostdiek, P. H., Ohmer, M. C., Shunemann, P. G., and Pollak, T. M., AppL Phys. Lett. 64 (1994) p. 3142.Google Scholar
16. Zapol, P., Pandey, R., Seel, M., Recio, J. M. and Ohmer, M. C., J. Phys. Condens. Matter, 11, 4517 (1999).Google Scholar
17. Jaffe, J. E. and Zunger, Alex, Phys. Rev. B, 30, 741(1984).Google Scholar
18. Smith, S. R., Evwaraye, A. O. and Ohmer, M. C.. Mater. Rec. Soc. Fall Meeting (Boston, 1997).Google Scholar
19. Fischer, W. D., Ohmer, M. C. and McCrae, J. E., J. Appl. Phys. 81, 3579 (1997).Google Scholar
20. Haliburton, L. E., Schunemann, Edwards G. J. P. G. and Pollak, T. M., J. Appl. Phys. 77, 435 (1994).Google Scholar
21. Pandey, R., Ohmer, M. C. and Gale, J. D., J. Phys. Condens. Matter 10, 5525 (1998).Google Scholar
22. Bairamov, B. H., Polushina, I. K., Rud', Yu. V., Rud', V. Yu., Schunemann, P. G., Ohmer, M. C., Fernelius, N. C., Inner, G., Monecke, J., Phys. Solid State, 40, 190 (1998).Google Scholar
23. Bairamov, B. H., Polushina, I. K., Rud', Yu. V., Rud', V. Yu., Schunemann, P. G., Ohmer, M. C., Fernelius, N. C., Inner, G., Monecke, J., (accepted to the publication in the Proceedings of the 24-th Intern. Conf. on the Physics of Semiconductors, Jerusalem, 1998.Google Scholar