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Anisotropic Electron Transport in Cu/Al Multilayers

Published online by Cambridge University Press:  25 February 2011

A. N. Fadnis  and
David V. Baxter
A. N. Fadnis
Affiliation:
Department of Physics, Indiana University, Bloomington, IN 47405
David V. Baxter
Affiliation:
Department of Physics, Indiana University, Bloomington, IN 47405
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Abstract

We have measured the anisotropy of the electron diffusivity in a series of Cu/Al multilayers. The Samples were made by magnetron sputtering and characterized by X-Ray diffraction. The low temperature transverse magnetoresistance of each sample was measured for two different orientations of the magnetic field—parallel and perpendicular to the plane of the sample film. The Weak Localization(WL) contribution to the magnetoresistance is sensitive to the component of the electron diffusivity in a plane perpendicular to the magnetic field. We use this fact to calculate the ratio of different components of the diffusivity from the observed dependence of magnetoresistance on the orientation of magnetic field. For our samples, the ratio of the in and out of plane components of the diffusivity, (Dxy/Dz), is seen to range between 1 and 2.2, and the anisotropy is largest for the sample with the highest conductivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 286: Symposium J – Nanophase and Nanocomposite Materials , 1992 , 397
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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