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Analysis of three types of Interdiffusion Process in Ingaas/Inp Quantum-Well and their Devices Implications

Published online by Cambridge University Press:  10 February 2011

Michael C.Y. Chan ,
K. S. Chan  and
E. Herbert Li
Michael C.Y. Chan
Affiliation:
University of Hong Kong, Department of Electrical & Electronic Engineering, Pokfulam, Hong Kong
K. S. Chan
Affiliation:
City University of Hong Kong, Department of Physics and Materials Science, Kowloon, Hong Kong
E. Herbert Li
Affiliation:
University of Hong Kong, Department of Electrical & Electronic Engineering, Pokfulam, Hong Kong
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Abstract

The optical properties of In0.53Ga0.47As/InP single quantum well (QW) (with an as-grown well width of 60Å structures) interdiffused with different cation and anion interdiffusion rates have been theoretically analyzed for applications in optoelectronics. The interdiffusion of TnGaAs/InP QW structures is complicated as interdifrusion can occur for either (i) only group-Ill (In,Ga), (ii) group-V (As,P), or (iii) both group-Ill and group-V sublattices. Depending on the resulting composition profiles, the shifts (blue or red) of the transition energies can be tuned to wavelengths between 1.3μm to 1.55μm for device applications. The results show that the control of the rates of cation and anion interdiffusion offers interesting possibilities for designing optoelectronic devices such as modulators and lasers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 450: Symposium O – Infrared Applications of Semiconductors , 1996 , 389
Copyright
Copyright © Materials Research Society 1997

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References

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