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Analysis of Optical Gain of Strained Wurtzite InxGa1-xN/GaN Quantum Well Lasers

Published online by Cambridge University Press:  10 February 2011

T. C. Chong ,
Y. C. Yeo ,
M. F. Li  and
W. J. Fan
T. C. Chong
Affiliation:
Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, S 119260, Singapore.
Y. C. Yeo
Affiliation:
Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, S 119260, Singapore.
M. F. Li
Affiliation:
Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, S 119260, Singapore.
W. J. Fan
Affiliation:
Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, S 119260, Singapore.
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Abstract

The valence subband structures, density-of-states, and optical gain of (0001) wurtzite (WZ) InxGa1-xN/GaN quantum wells (QWs) are studied using a numerical approach without analytical approximations. We used the effective-mass parameters of GaN and InN derived using the Empirical Pseudopotential Method. By varying the well width and mole fraction of In in the well material, the effects of quantum confinement and compressive strain are studied. A narrower well width and a higher In mole fraction in the well lead to TE enhancement and TM suppression of the optical gain. From the relationship between the optical gain and the radiative current density, we obtain the transparent current density for a single QW to be 200 A/cm2. Further, we analyze the InxGa1-xN/GaN/AlGaN separate confinement heterostructure multiple-QW laser structure. It is shown that a suitable combination of well width and number of QWs should be selected in optimizing the threshold current density in such MQW lasers

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 1119
Copyright
Copyright © Materials Research Society 1998

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References

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