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Analysis of Non-Uniform Creation of Light-Induced Defects in Schottky Barrier Solar Cell Structures

Published online by Cambridge University Press:  15 February 2011

Hongyue Liu ,
C. T. Malone ,
C. M. Fortmaiiii  and
C. R. Wronski
Hongyue Liu
Affiliation:
Center of Electronic Materials and Processing, Pennsylvania State University, University Park, PA 16802
C. T. Malone
Affiliation:
Center of Electronic Materials and Processing, Pennsylvania State University, University Park, PA 16802
C. M. Fortmaiiii
Affiliation:
Center of Electronic Materials and Processing, Pennsylvania State University, University Park, PA 16802
C. R. Wronski
Affiliation:
Center of Electronic Materials and Processing, Pennsylvania State University, University Park, PA 16802
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Abstract

Hydrogenated amorphous silicon (a-Si:H) TCO/n+/i/Ni Schottky barrier solar cells were degraded with illuminations of white and red light through both sides of the structure. Because the forward dark I-V's are sensitive to the distribution and any spatial variation of defects in the i-layer, these measurements were used to characterize the degraded cell structures. These characteristics were analyzed using a charged defect distribution of gap states consisting of D+, D°, and D states derived from corresponding film analysis. It was found that the non-uniformities of light induced defects created in the i-layer can be represented by two regions of different defect densities. The relative densities depend on the direction of illumination and their ratio even with white light is about a factor of four. This non-uniformity is expected to be less for p-i-n cells which have higher built-in potential and hence electric fields.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 687
Copyright
Copyright © Materials Research Society 1995

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References

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