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Analysis of InP Passivated with Thiourea/Ammonia Solutions and Thin CdS Films

Published online by Cambridge University Press:  03 September 2012

H. M. Dauplaise ,
A. Davis ,
K. Vaccaro ,
W. D. Waters ,
S. M. Spaziani ,
E. A. Martin  and
J. P. Lorenzo
H. M. Dauplaise
Affiliation:
USAF Rome Laboratory, Optical Components Branch, Hanscom Air Force Base, MA 01731
A. Davis
Affiliation:
USAF Rome Laboratory, Optical Components Branch, Hanscom Air Force Base, MA 01731
K. Vaccaro
Affiliation:
USAF Rome Laboratory, Optical Components Branch, Hanscom Air Force Base, MA 01731
W. D. Waters
Affiliation:
USAF Rome Laboratory, Optical Components Branch, Hanscom Air Force Base, MA 01731
S. M. Spaziani
Affiliation:
USAF Rome Laboratory, Optical Components Branch, Hanscom Air Force Base, MA 01731
E. A. Martin
Affiliation:
USAF Rome Laboratory, Optical Components Branch, Hanscom Air Force Base, MA 01731
J. P. Lorenzo
Affiliation:
USAF Rome Laboratory, Optical Components Branch, Hanscom Air Force Base, MA 01731
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Abstract

The use of thiourea/ammonia pre-treatments on (100) InP, followed by chemical bath deposition (CBD) of CdS thin films (∼ 30 Å), with low-temperature, low-pressure chemical vapor deposited SiO2 has been shown to produce metal-insulator-semiconductor (MIS) samples with near-ideal capacitance-voltage (C-V) response. Here, we report on x-ray photoelectron spectroscopy (XPS) analysis of the near-surface of InP following pre-treatment and CdS deposition. The pre-treatment was shown by XPS to form an indium sulfide layer and effectively remove native oxides from the InP surface. The subsequent deposition of CdS on a sulfur-passivated surface forms a stable layer which protects the substrate from oxidation during SiO2 chemical vapor deposition. MIS samples prepared using the pre-treatment without CdS deposition showed improved C- V response, while samples prepared with both the pre-treatment and CdS deposition showed a dramatic reduction in the density of interface states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 69
Copyright
Copyright © Materials Research Society 1997

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