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Analysis of Hydrogen Passivation Mechanisms in Poly-Si TFT’s by Employing R.F. Plasma

Published online by Cambridge University Press:  26 February 2011

K. Y. Choi ,
Y. S. Kim ,
H.S. Choi ,
B.S. Bae  and
M. K. Han
K. Y. Choi
Affiliation:
Department of Electrical Engineering, Seoul National University, Seoul 151–742, KOREA
Y. S. Kim
Affiliation:
Department of Electrical Engineering, Myongji Univeristy, Kyonggi-do 449–728, KOREA
H.S. Choi
Affiliation:
Department of Electrical Engineering, Seoul National University, Seoul 151–742, KOREA
B.S. Bae
Affiliation:
Samsung Electronics Co., Kiheung, Yongin-Gun, Kyonggi-do 449–990, KOREA
M. K. Han
Affiliation:
Department of Electrical Engineering, Seoul National University, Seoul 151–742, KOREA
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Abstract

The dominant pathways for hydrogen diffusion in poly-Si TFT’s are identified by analyzing the hydrogenation effect on the various device geometries. It is observed that the gate poly-Si thickness and channel width didn’t affect the hydrogenation. As the channel length was decreased down to 3 µm, threshold voltage was reduced and field effect mobility was increased significantly with hydrogeantion time. In the thick gate oxide (2000 Å, 4000 Å) poly-Si TFT’s, the device characteristics have been improved rapidly with hydrogenation time. The tail state density of thin gate oxide TFT wasn’t change by hydrgenation while that of thick gate oxide TFT was significantly reduced. Our experimental results may support the model that hydrogen atoms diffuse into the bulk of the active channel layer through the gate oxide and passivate the grain boundary and intragranular defects limitedly by gate oxide area.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 393
Copyright
Copyright © Materials Research Society 1995

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References

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