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An Investigation of Spin and Charge States Associated with Metastable Defects in N-Type Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  21 February 2011

R. J. Rasmussen ,
J. D. Cohen  and
J. M. Essick
R. J. Rasmussen
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403
J. D. Cohen
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403
J. M. Essick
Affiliation:
Department of Physics, Occidental College, Los Angeles, CA 90041
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Abstract

Depletion-width-modulated (DWM) ESR spectroscopy and junction capacitance techniques were employed to investigate deep-defect states in various metastable states of 10 and 80 Vppm PH3-doped a-Si:H. From the joint application of these methods, we enumerate the change in total spin and charge associated with emission of carriers from states within the mobility gap resulting from a modulated bias voltage. We conclude that the magnitude of the modulated spin-to-charge ratio is nearly unity, consistent with earlier similar investigations of n-type a-Si:H, where the D-/D0 transition was shown to dominate. Furthermore, we present results of a previously unreported “quadrature” DWM-ESR signal of large magnitude under a wide range of experimental conditions. Similar related effects are also reported from spin- and capacitance-transient studies. These results clearly demonstrate that the changes in spin significandy lag corresponding changes in charge.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 569
Copyright
Copyright © Materials Research Society 1991

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References

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