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An Investigation of Photo-Induced Degradation by Means of Photothermal Deflection Spectroscopy

Published online by Cambridge University Press:  26 February 2011

M. S. Bennett ,
S. Wiedeman ,
J. L. Newton  and
K. Rajan
M. S. Bennett
Affiliation:
Solarex Corporation, 826 Newtown-Yardley Road, Newtown, PA 18940 USA
S. Wiedeman
Affiliation:
Solarex Corporation, 826 Newtown-Yardley Road, Newtown, PA 18940 USA
J. L. Newton
Affiliation:
Solarex Corporation, 826 Newtown-Yardley Road, Newtown, PA 18940 USA
K. Rajan
Affiliation:
Solarex Corporation, 826 Newtown-Yardley Road, Newtown, PA 18940 USA
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Abstract

Absorption measurements of as deposited and photodegraded intrinsic amorphous hydrogenated silicon films were made using photothermal deflection spectroscopy (PDS). The films were light-soaked in situ using HeNe laser light to simulate AM1 illumination. An increase in subbandgap absorption occurred predominantly near energies of 1.2eV. A simple model was developed in which a density of states function is hypothesized and the resulting optical absorption at subgap energies is calculated. The measured absorption could be well matched in all cases by assuming a single peak of defect states at or slightly below the Fermi level. Further, the observed changes in optical absorption due to degradation could be modeled by increasing the density of the single peak of defect states and moving the Fermi level towards the valence band.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 577
Copyright
Copyright © Materials Research Society 1987

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References

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