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An Experimental Technique to Obtain the Specific Contact Resistance of Multi-Layer Interconnections

Published online by Cambridge University Press:  26 February 2011

H. B. Harrison ,
G. K. Reeves  and
A. J. Walton
H. B. Harrison
Affiliation:
IBM Thomas J. Watson Research Centre, Yorktown Heights, New York, U.S.A. on leave from R.M.I.T. Australia.
G. K. Reeves
Affiliation:
Telecom Australia Research Laboratories, Clayton, Australia.
A. J. Walton
Affiliation:
Edinburgh Microfabrication Facility, University of Edinburgh, Scotland, U.K.
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Abstract

The specific contact resistance between any two interconnecting layers is of vital importance in determining the total interconnection resistance of these layers. We present here an experimental technique to obtain the specific contact resistance when both of the conducting layers have finite conductivities of similar magnitudes. This structure is then used to obtain practical information on the poly to single crystal interconnection system, details of which are present. Finally a modification to this system is proposed and its status reviewed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54 , 1985 , 787
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1. Reeves, G.K., Harrison, H.B., Electronic Letters, Vol. 18, 1982, No. 25/26 pp 1083–1085.Google Scholar
2. Reeves, G.K., Harrison, H.B., IEEE Electron Device Letters, Vol. Ed1.3, No. 5, May, 1982, pp 111–113.Google Scholar
3. Reeves, G.K., Harrison, H.B., IEEE, VLSI Workshop on Test Structures, workshop notes, San Diego, Feb., 1984.Google Scholar
4. Harrison, H.B., Reeves, G.K., Mat. Res. Soc. Sym. Proc. Vol. 25 (eds. Baglin, J.E.E., Campbell, D.R., Chu, W.K.), 1984, pp 545–549.Google Scholar
5. Walton, A.J., Holwill, R., Robertson, J.M., Electronic Letters Vol. 21, 1985 No. 1 pp 13–14.Google Scholar