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An Atomistic View of Interface-Mediated Dislocation Plasticity in Thin Metal Films

Published online by Cambridge University Press:  01 February 2011

E. S. Ege  and
Y.-L. Shen
E. S. Ege
Affiliation:
Department of Mechanical Engineering, University of New Mexico Albuquerque, NM 87131, U.S.A.
Y.-L. Shen
Affiliation:
Department of Mechanical Engineering, University of New Mexico Albuquerque, NM 87131, U.S.A.
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Abstract

Atomistic simulations using molecular statics are carried out to study dislocation plasticity in thin metal films attached to stiff substrates. The analysis utilizes a sample two-dimensional crystal, with an embedded initial point defect used for triggering dislocation activities in a controlled manner. The existence of an interface between the film and the substrate is shown to delay plastic yielding and lead to film strengthening. The capability of atoms to slide along the interface plays a crucial role in determining the macroscopic stress-strain response and the microscopic dislocation activities. Within the modeling framework we examine the quantitative interfacial sliding behavior and the resulting dislocation-interface interactions and their consequences.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 795: Symposium U – Thin Films - Stresses and Mechanical Properties X , 2003 , U8.8
Copyright
Copyright © Materials Research Society 2004

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References

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