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An Atomistic Study of Surface Vacancy Diffusion

Published online by Cambridge University Press:  21 February 2011

L. Zhao ,
R. Najafabadi  and
D. J. Srolovtz
L. Zhao
Affiliation:
University of Michigan, Applied Physics Program, Ann Arbor, MI 48109
R. Najafabadi
Affiliation:
University of Michigan, Dept. of Materials Science and Engineering, Ann Arbor, MI 48109
D. J. Srolovtz
Affiliation:
University of Michigan, Applied Physics Program, Ann Arbor, MI 48109 University of Michigan, Dept. of Materials Science and Engineering, Ann Arbor, MI 48109
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Abstract

Diffusion of atoms and molecules on surfaces plays an important role in the growth of thin films. In the present study, the surface vacancy diffusion on Cu and Ni (100) and (111) planes is investigated via atomistic simulations. This investigation is performed using the Embedded Atom Method (EAM) interatomic potentials and the finite temperature properties are determined within the local harmonic and quasiharmonic frameworks. This study helps reveal fundamentals of surface vacancy diffusion in the thin film growth. Our results show that the vacancy diffusion is important on (100) surface but it is not the dominant diffusion mechanism on (111) plane.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 311: Symposium O – Phase Transformations in Thin Films–Thermodynamics and Kinetics , 1993 , 355
Copyright
Copyright © Materials Research Society 1993

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References

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