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An Atomistic Computer Simulation of Crack Extension in Cubic Silicon Carbide

Published online by Cambridge University Press:  26 February 2011

Akitaka Sawamura ,
Yoichi Watanabe  and
Ryoichi Yamamoto
Akitaka Sawamura
Affiliation:
Institute of Industrial Science, University of Tokyo, 7–22–1, Roppongi. Minato–ku, Tokyo 106, Japan
Yoichi Watanabe
Affiliation:
Cray Research Japan, Ltd.. 6–4. Ichibanchou, Chiyoda–ku, Tokyo 102, Japan
Ryoichi Yamamoto
Affiliation:
Institute of Industrial Science, University of Tokyo, 7–22–1, Roppongi. Minato–ku, Tokyo 106, Japan
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Abstruct

An atomistic computer simulation of mode I crack extension in cubic silicon carbide has been performed using a realistic many–body interatomic potential computed by Tersoff. The crack front is parallel to the [110] direction and the crack plane lies in the (111) plane. The stable crack tip configurations were calculated and the effective stress intensity factor and the effective crack tip position were evaluated in the relaxed atomic configuration by the least-square method. The crack was stable over a wide range of the stress intensity factors from 0. 6KG to 3. 4KG, where KG is the Griffith critical stress intensity factor. At 3.5KG an interatomic bond near the tip across the (001) plane ruptured and the crack advanced. When the crack is stable, the effective K is larger than the given K by nearly 0. 2KG to 0.4KG. Crack tip process was also simulated over a range of temperatures. At 1000K. secondary cracks were nucleated and grew like voids around the main crack, and thus the main crack was blunted.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 278: Symposium W – Computational Methods in Materials Science , 1992 , 147
Copyright
Copyright © Materials Research Society 1992

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