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An Atomic Force Microscopy and Ellipsometry Study of The Nucleation and Growth Mechanism of Polycrystalline Silicon Films on Silicon Dioxide

Published online by Cambridge University Press:  10 February 2011

C. Basa ,
M. Tinani  and
E. A. Irene
C. Basa
Affiliation:
Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3290
M. Tinani
Affiliation:
Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3290
E. A. Irene
Affiliation:
Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3290
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Abstract

A study was performed using a combination of in-situ real time ellipsometry and atomic force microscopy (AFM) to follow the RTCVD process in real time and measure key nucleation parameters in an effort to elucidate the mechanism of Si nucleation on SiO2. Real time ellipsometry data, in terms of delta versus time, showed significant changes as the deposition evolves from critical nuclei through coalescence to continuous film growth thereby allowing. process monitoring and control. From the AFM images, nuclei parameters such as nuclei height, radius, and density were collected and compared across processing temperatures. It was found that kinetic factors control the growth process resulting in a transition temperature (660°C) where the size, shape, and density of the nuclei abruptly changes from small numerous nuclei to large, sparse disk-like nuclei.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 525: Symposium W – Rapid Thermal & Integrated Processing VII , 1998 , 199
Copyright
Copyright © Materials Research Society 1998

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References

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