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An Analytical Model for Field-Enhanced Diffusion of Ionized Impurities in Highly Doped Si

Published online by Cambridge University Press:  17 March 2011

Bogdan S. Sokolovskii ,
Liubomyr S. Monastyrskii  and
Roman M. Kovtun
Bogdan S. Sokolovskii
Affiliation:
Ivan Franko National University, Lviv, UA-79602, Ukraine
Liubomyr S. Monastyrskii
Affiliation:
Ivan Franko National University, Lviv, UA-79602, Ukraine
Roman M. Kovtun
Affiliation:
Ivan Franko National University, Lviv, UA-79602, Ukraine
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Abstract

An expression for concentration dependence of diffusion coefficient of ionized impurity in semiconductors which is derived which is valid for the whole range of carrier degeneracy under the condition that the impurity concentration greatly exceeds the intrinsic carrier density. Due to reduction of impurity field screening by mobile carriers at degenerate conditions the diffusion coefficient is shown to be a monotonously increasing function of impurity concentration. It is proved that taking band gap narrowing into account results in a reduction of the diffusion coefficient in comparison with the case of unperturbed band structure. In addition, a decreasing concentration dependence of the diffusion coefficient can be realized at relatively low impurity concentrations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 610: Symposium B – Si Front End Processing - Physics & Technology..II , 2000 , B6.3
Copyright
Copyright © Materials Research Society 2000

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