Hostname: page-component-7479d7b7d-8zxtt Total loading time: 0 Render date: 2024-07-10T19:39:03.732Z Has data issue: false hasContentIssue false
  • English
  • Français

Amorphous-to-Crystalline Transformation and Metal Induced Crystallization Phenomena in a-Si:F and a-Si:D:H Thin Films

Published online by Cambridge University Press:  26 February 2011

F. Edelman ,
C. Cytermann ,
R. Brener ,
M. Eizenberg ,
R. Weil  and
W. Beyer
F. Edelman
Affiliation:
Technion-Israel Institute of Technology, Haifa, 32000, Israel
C. Cytermann
Affiliation:
Technion-Israel Institute of Technology, Haifa, 32000, Israel
R. Brener
Affiliation:
Technion-Israel Institute of Technology, Haifa, 32000, Israel
M. Eizenberg
Affiliation:
Technion-Israel Institute of Technology, Haifa, 32000, Israel
R. Weil
Affiliation:
Technion-Israel Institute of Technology, Haifa, 32000, Israel
W. Beyer
Affiliation:
Institut fur Schicht- und Ionentechnik, KFA Juelich., Germany
Get access

Abstract

The structural stability of silicon in the amorphous state has been studied by TE1 on in-situ heat treated non-supported layers of a-Si:F, a-Si:D:H and double-layers of a-Si:F/Pd and a-Si:D:H/Pd structures. The a-Si:F and a-Si:D:H films, 500-800A thick, were evaporated by plasma decomposition of a(SiH4+D2)-mixture and SiF2, at 200-260°C onto cleaved rock salt. Pd film was deposited on a-Si by electron beam evaporation at room temperature. The amorphous-to-crystalline transition for the a-Si was quantitatively described by the delay time, t0, before the onset of crystallization. This parameter was found to decrease exponentially with the temperature. Influence of the Pd on t0 (metal induced crystallization) is discussed. This is the first report on the influence of F on the metal/a-Si system. It is also the first time a direct method is used to determine the temperature dependence of the fundamental parameter-delay time preceding a-Si crystallization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 205: Symposium F – Kinetics of Phase Transformations , 1990 , 75
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Madan, A. and Shaw, M.P., The Physics and Applications of Amorphous Semiconductors (Academic Press, New York 1988),Google Scholar
2. Bosnell, J.R. and Voisey, U.C., Thin Solid Films, 6, 161 (1970).Google Scholar
3. Ottaviani, G., Sigurd, D., Marrello, V., Mayer, J.W., and McCaldin, J.O., J.Appl.Phys. 45. 1730 (1974)Google Scholar
4. Greene, J.E. and Mei, L., Thin Solid Films, 34, 27 (1976).Google Scholar
5. Tsai, C.C., Thompson, M.J., Nemanich, R.J., Jackson, W.B., and Stafford, B.L., J. Vac; Sci. Technol. A1, 785 (1983).CrossRefGoogle Scholar
6. Tsai, C.C., Nemanich, R.J., and Thompson, M.J., 21, 632 (1982).Google Scholar
7. Hultman, L., Robertsson, A., Hentzell, H.T.G., Engstrom, I., and Psaras, P.A., J. Appl. Phys., 62, 3647 (1987).CrossRefGoogle Scholar
8. Ishihara, Shin-Ichiro, Kitagawa, Masatoshi, and Hirao, Takashi, 62, 837 (1987).Google Scholar
9. Liu, Gang and Fonash, J., Appl. Phys. Lett. 55, 660 (1989).Google Scholar
10. Cong, S.F., Hentzell, H.T.G., and Robertsson, A.E., J. Appl. Phys. 64, 1457 (1988).Google Scholar
11. Beyer, W., Gatts, C.E., Herion, J., Losch, W., and Wagner, H., J. of Non-Crystalline Solids, 97/98, 951 (1987).Google Scholar
12. Cytermann, C., Brener, R., Sacher, E., Pratt, B., and Weil, R., Appl. Phys. Lett. 52, 191 (1988).Google Scholar
13. Janai, M., Weil, R., and Pratt, B., Phys. Rev. B31, 5311 (1985).Google Scholar
14. Olson, G.L. and Roth, J.A., Mater. Sci. Repts. 3, 1 (1988).Google Scholar
15. Edelman, F.L., Heydenreich, J., Hoehl, D., Matthai, J., Melnik, I., Rzhanov, A., Voelskov, M., and Werner, P., Phys. Stat. Sol. A98, 383 (1986).Google Scholar
16. Iverson, R.B. and Reif, R., J. Appl. Phys. 62 1975 (1987).CrossRefGoogle Scholar
17. Blum, N.A. and Feldman, C., J. of Non-Crystalline Solids, 11, 242 (1972).Google Scholar
18. Koster, U., Phys. Stat. Sol. A48, 313 (1978).Google Scholar
19. Edelman, F., Cytermann, C., Brener, R., Eizenberg, M., Weil, R., and Beyer, W., Proceedings of MRS Meeting, Boston, 1990.Google Scholar