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Amorphous-Silicon Thin-Film Transistors Matched to Ultra-Large Panels

Published online by Cambridge University Press:  15 February 2011

Masakiyo Matsumura  and
Akihiko Saitoh
Masakiyo Matsumura
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152, Japan, E-mail : matumura@pe.titech.ac.jp
Akihiko Saitoh
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152, Japan, E-mail : matumura@pe.titech.ac.jp
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Abstract

Time-delay problems will become extremely severe in active-matrix-addressed ultra-large liquid-crystal display-panels. The problem caused by large crossover capacitance can be solved by moving the signal bus-line to the facing glass plate. The problem caused by large gate capacitance can be solved only by reducing the TFT channel much shorter than the conventional value. This requirement can be satisfied by a novel vertical TFT fabricated by using a selective excimer-laser crystallization method. Switching characteristics have been evaluated for the prototype devices, and good on-characteristics have been confirmed for the O.5μm-long gate device. Improved device structures are also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 821
Copyright
Copyright © Materials Research Society 1997

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References

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