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Amorphous Silicon/Crystalline Silicon Heterojunctions in Nuclear Radiation Detector Fabrication

Published online by Cambridge University Press:  10 February 2011

J.T. Walton ,
M. Amman ,
G. Conti ,
W.S. Hong ,
P.N. Luke  and
F.P Ziemba
J.T. Walton
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley CA 94720, jtwalton@lbl.gov
M. Amman
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley CA 94720
G. Conti
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley CA 94720
W.S. Hong
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley CA 94720
P.N. Luke
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley CA 94720
F.P Ziemba
Affiliation:
Quantrad Sensor Inc., Santa Clara, CA 95054
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Abstract

Application of amorphous silicon/crystalline silicon heterojunctions formed by RF sputter deposition and plasma enhanced chemical vapor deposition to the fabrication of nuclear radiation detectors is described. The performance of these heterojunctions as blocking contacts on highresisitivity p-type and n-type single crystal silicon and on lithium-ion compensated silicon (Si(Li)), which are commonly used in silicon detector fabrication, is presented. It is shown that an aluminum/amorphous-silicon contact on Si(Li) x-ray detectors results in about a factor of two reduction in the background counts when compared to a normal gold barrier contact.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 351
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

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