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Amorphous Si1-YGeY:H, F films obtained by Low Frequency PECVD for uncooled microbolometers

Published online by Cambridge University Press:  21 March 2011

R. Ambrosio ,
A. Torres ,
A. Kosarev ,
A. S. Abramov ,
A. Heredia ,
M. Landa  and
M. Garcia
R. Ambrosio
Affiliation:
Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Apdo. P. 51 and 216, P.O. Box. 72000, Puebla, Mexico.
A. Torres
Affiliation:
Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Apdo. P. 51 and 216, P.O. Box. 72000, Puebla, Mexico.
A. Kosarev
Affiliation:
Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Apdo. P. 51 and 216, P.O. Box. 72000, Puebla, Mexico.
A. S. Abramov
Affiliation:
A.F Ioffe Phys. Techn. Institute St.- Petersburg, 194021, Russia.
A. Heredia
Affiliation:
Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Apdo. P. 51 and 216, P.O. Box. 72000, Puebla, Mexico.
M. Landa
Affiliation:
Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Apdo. P. 51 and 216, P.O. Box. 72000, Puebla, Mexico.
M. Garcia
Affiliation:
Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Apdo. P. 51 and 216, P.O. Box. 72000, Puebla, Mexico.
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Abstract

In this work, we report the composition, optical, and electrical properties of a- Si1-YGeY: H, F films to be used as sensing layer in uncooled microbolometers. The a-Si1-YGeY films where Y is Ge content in solid phase were deposited by low frequency PECVD from SiH4 and GeF4 feed gases, and H2 and Ar were used for dilution. The film composition, IR transmission and temperature dependence of conductivity were measured. The reduction of conductivity activation energy from 0.86 eV to 0.39 eV and the increase of room temperature conductivity from 1x10−9 to 2.1×10−3 Ohm−1cm−1 were observed with the change of Y from 0 (Si) to 1(Ge). These results demonstrate this material to be a good candidate as a sensing material in uncooled micro-bolometers, due to its high absorption in the range of λ = 10-13 μm, its relatively high activation energy, Ea=0.4 eV, consequently, a high temperature coefficient of resistance (TCR), and moderate resistivity at room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A4.29
Copyright
Copyright © Materials Research Society 2004

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