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Amorphous Phase Formation and Recrystallization in Ion-Implanted Silicides

Published online by Cambridge University Press:  25 February 2011

C.A. Hewett ,
I. Suni ,
S.S. Lau ,
L.S. Hung  and
D.M. Scott
C.A. Hewett
Affiliation:
University of California at San Diego, La Jolla, CA 92093.
I. Suni
Affiliation:
Caltech, Pasadena, CA 91125.
S.S. Lau
Affiliation:
University of California at San Diego, La Jolla, CA 92093.
L.S. Hung
Affiliation:
Cornell University, NY 14853.
D.M. Scott
Affiliation:
University of California at San Diego, La Jolla, CA 92093.
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Abstract

Ion implantation induced phase transformations and recrystallization during post-annealing in CoSi2, CrSi2, and Pd2Si are studied. All three silicides are found to reorder at about 1/3 the melting point of the silicide. We speculate that ion-implanted silicides recrystallize by the same mechanism and that amorphous phases produced by implantation are unstable rather than metastable.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 145
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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