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Amorphous Nitride Alloys as Hosts for Rare-Earth Luminescent Ions.

Published online by Cambridge University Press:  21 March 2011

M. L. Caldwell ,
M. E. Little ,
C. M. Spalding ,
M. E. Kordesch  and
H. H. Richardson
M. L. Caldwell
Affiliation:
Condensed Matter and Surface Science Program, Ohio University, Athens, OH 45701, U.S.A.
M. E. Little
Affiliation:
Condensed Matter and Surface Science Program, Ohio University, Athens, OH 45701, U.S.A.
C. M. Spalding
Affiliation:
Condensed Matter and Surface Science Program, Ohio University, Athens, OH 45701, U.S.A.
M. E. Kordesch
Affiliation:
Department of Physics and Astronomy, Ohio University, Athens, OH 45701, U.S.A., kordesch@helios.phy.ohiou.edu
H. H. Richardson
Affiliation:
Department of Chemistry and Biochemistry, Ohio University, Athens, OH 45701, U.S.A., richards@helios.phy.ohiou.edu
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Abstract

Amorphous alloys of aluminum-gallium nitride doped with erbium (Er) were deposited at 300 K. The compositions ranged from 19% Al to 86% Al with optical band gaps varying linearly with composition from 3.4 eV (GaN) to 6.2 eV (AlN). The films were deposited on p-doped silicon (111) by a dc/rf dual gun system in a nitrogen/argon atmosphere at a pressure of 4.8 milli-Torr. After growth the films were thermally “activated” at 1070 K for 10 minutes in a nitrogen atmosphere. The cathodoluminescence emission intensities decreased linearly with Ga composition. This dependence suggests that the higher energy transitions in the Er ion are quenched by transitions to the conduction band of the alloys.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 667: Symposium G – Luminescence and Luminescent Materials , 2001 , G3.8
Copyright
Copyright © Materials Research Society 2001

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References

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