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Amorphization Mechanism of Si/Ge Superlattices Upon Ion Implantation

Published online by Cambridge University Press:  15 February 2011

N.A. Sobolev ,
U. Kaiser ,
I.I. Khodos ,
H. Presting  and
U. König
N.A. Sobolev
Affiliation:
Department of Physics, University of Aveiro, 3810 Aveiro, Portugal, sobolev@fis.ua.pt
U. Kaiser
Affiliation:
Institute of Solid State Physics, Friedrich Schiller University, 07743 Jena, Germany
I.I. Khodos
Affiliation:
Institute of Microelectronics Technology and High Purity Materials, 142432 Chernogolovka, Russia
H. Presting
Affiliation:
Daimler Benz Research Center, 89013 Ulm, Germany
U. König
Affiliation:
Daimler Benz Research Center, 89013 Ulm, Germany
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Abstract

The damage production in the Si9Ge6 superlattices (SLs) upon implantation of 150 keV Ar+ ions at 300 K was studied my means of the cross-sectional transmission electron microscopy (XTEM) and electron microdiffraction. It was found that the amorphization occurs in a narrow dose range of (1 – 2) × 1014 cm-2 via accumulation of point defects. The conclusion drawn earlier (Mater. Sci. Forum 248-249, 289 (1997)) on the coherent amorphization of the Si and Ge layers in the SLs was confirmed. Possible mechanisms of the layer interaction leading to the observed behavior are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 540: Symposium N / Microstructural Processes in Irradiated Materials , 1998 , 91
Copyright
Copyright © Materials Research Society 1999

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