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Aluminum-Ion Implantation into 4H-SiC (11-20) and (0001)

Published online by Cambridge University Press:  15 March 2011

Y. Negoro ,
T. Kimoto  and
H. Matsunami
Y. Negoro
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510, Japan
T. Kimoto
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510, Japan
H. Matsunami
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto 615-8510, Japan
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Abstract

High-dose aluminum-ion (Al+) implantation into 4H-SiC (11-20) and (0001) has been investigated. Surface morphologies of implanted (0001) samples were improved by annealing with a graphite cap. Implant-dose dependence and annealing-time dependence of electrical properties are examined by Hall-effect measurements. A low sheet resistance of 2.3 kΩ/sq. was obtained in (0001) by high-dose Al+ implantation at 500 °C with a dose of 3.0 × 1016 cm−2 and high-temperature annealing at 1800 °C for a short time of 1 min. In the case of (11-20), even room-temperature implantation brought a low sheet resistance below 2 kΩ/sq. after annealing at 1800 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 815 , 2004 , J5.2
Copyright
Copyright © Materials Research Society 2004

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