Hostname: page-component-76fb5796d-45l2p Total loading time: 0 Render date: 2024-04-27T03:52:42.438Z Has data issue: false hasContentIssue false

Aluminum Nitride: A Review of the Knowledge Base for Physical Property Development

Published online by Cambridge University Press:  21 February 2011

G. W. Prohaska
Affiliation:
The Carborundum Company P.O. Box 51540 Phoenix, AZ 85076
G. R. Miller
Affiliation:
The Carborundum Company P.O. Box 51540 Phoenix, AZ 85076
Get access

Abstract

The status of the publicly available knowledge base for aluminum nitride and its processing has been briefly reviewed in an attempt to clarify future research needs. Driving forces for the development of a scientific understanding of the property/process relationships have thus far been focused on thermal conductivity. Future developments may well be aimed at (1) retention of presently available properties while attempting to lower ceramic processing temperatures and (2) understanding metal-ALN and polymer-ALN interfaces. Progress has thus far been sufficient to define first generation ceramic powder requirements and sintering conditions to give adequate properties for packaged device evaluation. In addition, metal-ALN interfacial bonding, although not well developed, has shown sufficient promise to insure long-term interest in this material.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Blum, J. B. and Anzai, K., Hybrid Circuit Technology, August 1989 Google Scholar
2. Kurokawa, Y., Utsumi, K., Takamizawa, H., Kamata, T. and Noguchi, S., IEEE Trans Compon. Hybrids and Manuf. Technol., CMHT–8, 247 (1985)Google Scholar
3. Asai, H., Ueno, F., Iwase, N., Sato, H., Mizunoya, N., Kimura, T., Endo, K., Takahashi, T. and Sugiura, Y., IEEE Japan IEMT Proceedings, 1989, 221Google Scholar
4. Slack, B. A., Tanzilli, R. a., Pohl, R. O. and Vandersande, J. W., J. Phys. Chem. Solids, 48, 641 (1987)Google Scholar
5. Enck, R. C., Harris, R. D. and Youngman, R. A., Advanced Characterization Techniques, Ceramics Transactions, Vol.5, 1989 Google Scholar
6. Peierls, R., An. Phys., 3, 1055 (1929)Google Scholar
7. Julian, C. L., Phys. Rev., 137, 128 (1965)Google Scholar
8. Leibfried, G. and Schlomann, E., Nach. Akad. Wiss. Gottingen, Math. Phys. Klasse, 4, 71 (1954)Google Scholar
9. Abeles, B., Phys. Rev., 131, 1906 (1963)Google Scholar
10. Virkar, A. V., Miller, M. L., Cutler, I. B. and Gordon, R. S., U.S. Patent No. 4,113,928 (12 September 1978)Google Scholar
11. Dettmer, E. S., Charles, H. K. Jr., Mobley, S. J. and Romenesko, B. M., Proc. ISHM '88, 545Google Scholar
12. Slack, G. A. and McNelly, T. F., J. Crystal Growth, 34, 263 (1976) and ref. thereinGoogle Scholar
13. Fiat Rev. of Ger. Sci., 24 Inorg. Chem., Pt 2, Klimm, W. (ed), 1948 p. 155 Google Scholar
14. Schulze, R. K., Mantell, O. R., Gladfelter, W. L. and Evans, J. F., J. Vac. Sci. Technol. A: 5, 2162 (1988)Google Scholar
15. Kuramoto, H., Taniguchi, H. and. Aso, I., Presented at the Int. Symp. On Cer. Substrates and Packages, Oct. 18–21, 1987, Denver, CO Google Scholar
16. Kuramoto, N., Taniguchi, H. and Aso, I., Ceramic Bull., 68 (4), 883 (1989)Google Scholar
17. Virkar, A. V., Jackson, T. B. and Cutler, R. A., to be published in J. Am. Cer. Soc.Google Scholar
18. Kurokawa, Y., Utsumi, K. and Takamizawa, H., J. Am. Cer. Soc., 71, 588 (1988)Google Scholar
19. Kuramoto, N., Taniguchi, H., Numata, Y. and Aso, I., Yogyo-Kyokai-Shi, 93, 517 (1985)Google Scholar
20. Troczynski, T. B. and Nicholson, P. S., J. Am. Cer. Soc., 72 (8), 1488 (1989)Google Scholar
21. Chen, C.-F., Proc. 9th Ann. Int. Electronic Packaging Conf., Sept. 11–13, 1989, San Diego, CA, 1291 Google Scholar
22. Parker, W. J., Jenkins, R. J., Butler, C. P. and Abbott, G. L., J. Appl. Phys., 32 (9), 1679 (1961)Google Scholar
23. Taylor, R. E. and Maglic, K. D., in Compendium of Thermophysical Property Measurement Methods 1, Maglic, K. D., Cezairliyan, A. and Peletsky, V. E., Editors, Plenum Press, New York, 1984 Google Scholar
24. Enck, R. C. and Harris, R. D., presented at the Fall Meeting of the Materials Research Society, 11/27 – 12/2, 1989, Boston, MAGoogle Scholar
25. Enck, R. C. and Harris, R. D., 2nd Electronic Materials and Processing Congress, April 24–28, 1989, Philadelphia, PA Google Scholar
26. Harris, R. D., Enck, R. C. and Fields, J. L., Fall Meeting of the Materials Research Society, 11/27 – 12/2, 1989, Boston, MAGoogle Scholar
27. Feil, M., Hybrid Circuits, 18, 29 (1989)Google Scholar
28. Iwase, N., Anzai, K., Shinozaki, K., Hirao, O., Thanh, T. D. and Sugiura, Y., IEEE Trans. Compan. Hybrids Manuf. Technol., CHMT–8, 253 (1985)Google Scholar
29. Dettmer, E. S. and Charles, H. K. Jr., Proc. ISHM '87, 19Google Scholar
30. Cox, C. V., Hutfless, M. J., Allison, K. and 0. Hankey, L., Int. J. Hybrid Microelectron., 10 (3), 8 (1987)Google Scholar
31. Westwood, A. D. and Notis, M. R., Mater. Res. Soc. Symp. Proc., 10, 331 (1988)Google Scholar
32. Westwood, A. D. and Notis, M. R., To be published in Mater. Res. Soc. Symp. Proc., 1989, San Diego, CA Google Scholar
33. Brunner, D. G. and Wienand, K. H., Interceram, 4, 29 (1988)Google Scholar
34. Chanchani, R., IEEE Trans Compon. Hybrids Manuf. Technol., CMHT–11, 427 (1988)Google Scholar
35. Sawamura, K. and Uchikoba, F., Jpn. Kokai Tokkyo Koho JP 63/129085 A2 [88/129085], Chem. Abstracts 110:68024fGoogle Scholar
36. Yamaguchi, T. and Kageyama, M., IEEE Trans. Compon., Hybrids, Manuf. Technol., CHNT–12, 402 (1989)Google Scholar
37. Kurihara, Y., Inoue, K., Takahashi, M., Yatsuno, K., Sawahata, M. and Ohashi, M., Jpn. Kokai Tokkyo Koho JP 62/278182 A2 [87/278182], Chem. Abstracts 108:117638dGoogle Scholar
38. Jones, S. and Scott, W. D., to be published in Advances in CeramicsGoogle Scholar