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Alternate Gate Oxides for Silicon Mosfets Using High-k Dielectrics

Published online by Cambridge University Press:  10 February 2011

C. A. Billman ,
P. H. Tan ,
K. J. Hubbard  and
D. G. Schlom
C. A. Billman
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802-5005, cab180@psu.edu
P. H. Tan
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802-5005, cab180@psu.edu
K. J. Hubbard
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802-5005, cab180@psu.edu
D. G. Schlom
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802-5005, cab180@psu.edu
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Abstract

High K (dielectric constant) and silicon-compatibility are essential for an alternative gate dielectric for use in silicon MOSFETs. Thermodynamic data were used to comprehensively evaluate the thermodynamic stability of binary oxides and binary nitrides in contact with silicon at 1000 K. Using the Clausius-Mossotti equation and ionic polarizabilities, the K of all known inorganic compounds composed of Si-compatible binary oxides was estimated. A ranked list of alternate gate oxide candidates that are likely to possess both high K and silicon-compatibility is given.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 409
Copyright
Copyright © Materials Research Society 1999

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References

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