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Al/Ni And Al/Ti Ohmic Contact To P-type SiC Diffused Layer

Published online by Cambridge University Press:  21 March 2011

Xaiobin Wang ,
Stanislav Soloviev ,
Ying Gao ,
G. Straty ,
Tangali Sudarshan ,
John R. Williams  and
John Crofton
Xaiobin Wang
Affiliation:
Univ. of South Carolina, Dept. of Electrical Engineering, Columbia, SC.
Stanislav Soloviev
Affiliation:
Univ. of South Carolina, Dept. of Electrical Engineering, Columbia, SC.
Ying Gao
Affiliation:
Univ. of South Carolina, Dept. of Electrical Engineering, Columbia, SC.
G. Straty
Affiliation:
Univ. of South Carolina, Dept. of Electrical Engineering, Columbia, SC.
Tangali Sudarshan
Affiliation:
Univ. of South Carolina, Dept. of Electrical Engineering, Columbia, SC.
John R. Williams
Affiliation:
Auburn Univ., Leach Nuclear Science center, Auburn, AL
John Crofton
Affiliation:
Physics Department, Murray State University, KY
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Abstract

Ohmic contacts to p-type SiC were fabricated by depositing Al/Ni and Al/Ti followed by high temperature annealing. A p-type layer was fabricated by Al or B diffusion from vapor phase into both p-type and n-type substrates. The thickness of the diffused layer was about 0.1–0.2 μm with surface carrier concentration of about 1.0×1019cm−3. Metal contacts to a p-type substrate with a background doping concentration of 1.2×1018cm−3, without a diffusion layer, were also formed. The values of specific contact resistance obtained by Circular Transmission Line Method (CTLM) and Transfer Length Method (TLM) for the n-type substrate, and by Cox & Strack method for p-type substrate, respectively, varied from 1.3×10−4Ωcm2 to 8.8×10−3 Ωcm2. The results indicate that the specific contact resistance could be significantly reduced by creating a highly doped diffused surface layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H5.19
Copyright
Copyright © Materials Research Society 2001

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References

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