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AlN Periodic Multiple-layer Structures Grown by MOVPE for High Quality Buffer Layer

Published online by Cambridge University Press:  31 January 2011

Vladimir Kuryatkov ,
Wen Feng ,
Mahesh Pandikunta ,
Dana Rosenbladt ,
Boris Borisov ,
Sergey A Nikishin  and
Mark Holtz
Vladimir Kuryatkov
Affiliation:
vkuryatk@ttu.edu, Texas Tech University, Lubbock, Texas, United States
Wen Feng
Affiliation:
wen.feng@ttu.edu, United States
Mahesh Pandikunta
Affiliation:
mahesh.pandikunta@ttu.edu, United States
Dana Rosenbladt
Affiliation:
dana.m.rosenbladt@ttu.edu, Texas Tech University, Lubbock, Texas, United States
Boris Borisov
Affiliation:
b.borisov@ttu.edu, United States
Sergey A Nikishin
Affiliation:
sergey.a.nikishin@ttu.edu, United States
Mark Holtz
Affiliation:
MARK.HOLTZ@ttu.edu, Texas Tech University, Lubbock, Texas, United States
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Abstract

High crystal quality crack-free AlN on sapphire was grown by low pressure metal organic vapor phase epitaxy (MOVPE). Growth experiments combine two recent approaches: the ammonia pulse-flow method and ammonia continuous-flow growth mode by varying the V/III ratio. The detailed aspects of MOVPE, employing the periodic multilayer approach at low, intermediate, and high temperatures are described. This method yields significant reduction of screw dislocation density and provides very smooth surface for thin AlN layers.

Keywords

nitridex-ray diffraction (XRD)vapor phase epitaxy (VPE)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1202: Symposium I – III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions , 2009 , 1202-I05-04
Copyright
Copyright © Materials Research Society 2010

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