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Alloying behavior of the Ni/In/Ni/n-GaAs Ohmic Contact

Published online by Cambridge University Press:  25 February 2011

Chia-Hong Jan ,
Doug Swenson  and
Y. Austin Chang
Chia-Hong Jan
Affiliation:
1509 University Avenue, Materials Science & Engineering Department, University of Wisconsin - Madison, Madison, Wisconsin 53706
Doug Swenson
Affiliation:
1509 University Avenue, Materials Science & Engineering Department, University of Wisconsin - Madison, Madison, Wisconsin 53706
Y. Austin Chang
Affiliation:
1509 University Avenue, Materials Science & Engineering Department, University of Wisconsin - Madison, Madison, Wisconsin 53706
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Abstract

The interactions between Ni and Ni/In/Ni thin-films and GaAs were studied by SEM, SAM and AES. The presence of a molten phase was observed for both contacts after annealing at 820°C for 3 minutes. This behavior was rationalized in terms of the presence of a ternary eutectic reaction in the gallium-nickel-arsenic system. DTA confirmed the existence of the reaction:

at 810°C. In the case of Ni/In/Ni, melting was thought to occur because of the segregation of indium metal to the contact surface and the subsequent melting of the nearly ternary interfacial region. Upon further cooling the formation of NiGa, NiAs, InxGa1−xAs and an unspecified compound Ni-In was believed to occur. The contact was shown to be either sintered or alloyed, depending upon processing conditions.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 259
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Braslau, N., Gunn, J.B., and Staples, J.L., Solid-State Electron. 10, 179 (1983).Google Scholar
2. Shih, Y.C., Murakami, M., Wilkie, E.L., and Callegari, A., J. Appl. Phy. 62, 582 (1987).CrossRefGoogle Scholar
3. Sands, T., Marshall, E.D. and Wang, L.C., J. Mater. Res. 3 (5), 914 (1988).Google Scholar
4. Yu, L.S., Wang, L.C., Marshall, E.D., Lau, S.S. and Kuech, T.F., J. Appl. Phys. 65 (4), 1621 (1985).CrossRefGoogle Scholar
5. Murakami, M., and Price, W.H., Appl. Phys. Lett. 51, 664 (1987).CrossRefGoogle Scholar
6. Murakami, M., Shih, Y.C., Price, W.H., and Wilkie, E.L., J. Appl. Phys. 64, 1974 (1988).Google Scholar
7. Murakami, M., Price, W.H., Greiner, J.H., Feder, J.D. and Parker, C.C., IBM Research Report, RC 14158 (#63391), 1988.Google Scholar
8. Lahav, A., Eizenberg, M., and Komem, Y., J. Appl. Phys. 60 (3), 991 (1986).CrossRefGoogle Scholar
9. Lin, J.-C., Zheng, X.-Y., Hsieh, K.-C. and Chang, Y.A. in Epitaxy of Semiconductor Layered Structures. (Eds: Tung, R.T., Dawson, L.R. and Gunshor, R.L.), MRS Symposium Proa, 102 233 (1988).Google Scholar
10. Zheng, X.-Y., Lin, J.-C., Swenson, D., Hsieh, K.-C. and Chang, Y.A., Mat. Sci. Engin., B5, 63 (1989).CrossRefGoogle Scholar