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Aligned Carbon Nanotubes Via Microwave Plasma Enhanced Chemical Vapor Deposition

Published online by Cambridge University Press:  10 February 2011

H. Cui ,
D. Palmer ,
O. Zhou  and
B. R. Stoner
H. Cui
Affiliation:
Curriculum in Applied and Materials Science, University of North Carolina, Chapel Hill, NC 27599, hcui@physics.unc.edu
D. Palmer
Affiliation:
MCNC Materials and Electronic Technologies, RTP, NC 27709
O. Zhou
Affiliation:
Curriculum in Applied and Materials Science, University of North Carolina, Chapel Hill, NC 27599, hcui@physics.unc.edu Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599
B. R. Stoner
Affiliation:
Curriculum in Applied and Materials Science, University of North Carolina, Chapel Hill, NC 27599, hcui@physics.unc.edu Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599
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Abstract

Aligned multi-wall carbon nanotubes have been grown on silicon substrates by microwave plasma enhanced chemical vapor deposition using methane/ammonia mixtures. The concentration ratio of methane/ammonia in addition to substrate temperature was varied. The morphology, structure and alignment of carbon nanotubes were studied by scanning electron microscopy and transmission electron microscopy. Both concentric hollow and bamboo-type multi-wall carbon nanotubes were observed. Growth rate, size distribution, alignment, morphology, and structure of carbon nanotubes changed with methane/ammonia ratio and growth temperature. Preliminary results on field emission properties are also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 593: Symposium U – Amorphous & Nanostructured Carbon , 1999 , 39
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. Iijima, S., Nature 354, 56(1991)Google Scholar
2. Dresselhaus, M. S., Nature 358, 195(1992)Google Scholar
3. Rinzler, A. G., Hafner, J. H., Nikolaev, P., Lou, L., Kim, S. G., Tomanek, D., Nordlander, P., Colbert, D. T., Smalley, R. E., Science 269, 1550(1995)Google Scholar
4. Dillon, A. C., Jones, K. M., Bekkedahl, T. A., Kiang, C. H., Bethune, D. S., Heben, M. J., Nature 386, 377(1997)Google Scholar
5. Niu, C., Sichel, E. K., Hoch, R., Moy, D., Tennent, H., Appl. Phys. Lett. 70, 1480(1997)Google Scholar
6. Tans, S. J., Verschueren, A. R. M., Dekker, C., Nature 393, 49(1998)Google Scholar
7. Saito, Y., Uemura, S., Hamaguchi, K., Jpn. J. Appl. Phys. 37, L346(1998)Google Scholar
8. Wang, Q. H., Corrigan, T. D., Dai, J. Y., Chang, R. P. H., Krauss, A. R., Appl. Phys. Lett. 70, 3308(1997)Google Scholar
9. Zhu, W., Bower, C., Zhou, O., Kochanski, G., Jin, S., Appl. Phys. Lett 75, 873(1999)Google Scholar
10. Liu, C., Fan, Y. Y., Liu, M., Cong, H. T., Cheng, H. M., Dresselhaus, M. S., Science 286, 1127(1999)Google Scholar
11. Li, W. Z., Xie, S. S., Qian, L. X., Chang, B. H., Zou, B. S., Zhou, W. Y., Zhao, R. A., Wang, G., Science 274, 1701(1996)Google Scholar
12. Terrones, M., Grobert, N., Olivares, J., Zhang, J. P., Terrones, H., Kordatos, K., Hsu, W. K., Hare, J. P., Townsend, P. D., Prassides, K., Cheetham, A. K., Kroto, H. W., Walton, D. R. M., Nature 388, 52(1997)Google Scholar
13. Huang, Z. P., Xu, J. W., Ren, Z. F., Wang, J. H., Siegal, M. P., Provencio, P. N., Appl. Phys. Lett, 73, 3845(1998)Google Scholar
14. Fan, S., Chapline, M. G., Franklin, N. R., Tombler, T. W., Cassell, A. M., Dai, H., Science 283, 512(1999)Google Scholar
15. Ren, Z. F., Huang, Z. P., Xu, J. W., Wang, J. H., Bush, P., Siegal, M. P., Provencio, P. N., Science 282, 1105(1998)Google Scholar