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AlGaN/GaN HFETs and Insulated Gate HFETs DC and RF stability

Published online by Cambridge University Press:  01 February 2011

Alexei Koudymov ,
Salih Saygi ,
Naveen Tipirneni ,
Grigory Simin ,
Vinod Adivarahan ,
Jinwei Yang  and
M. Asif Khan
Alexei Koudymov
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina, 29208, USA; e-mail: koudymov@engr.sc.edu
Salih Saygi
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina, 29208, USA; e-mail: koudymov@engr.sc.edu
Naveen Tipirneni
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina, 29208, USA; e-mail: koudymov@engr.sc.edu
Grigory Simin
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina, 29208, USA; e-mail: koudymov@engr.sc.edu
Vinod Adivarahan
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina, 29208, USA; e-mail: koudymov@engr.sc.edu
Jinwei Yang
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina, 29208, USA; e-mail: koudymov@engr.sc.edu
M. Asif Khan
Affiliation:
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina, 29208, USA; e-mail: koudymov@engr.sc.edu
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Abstract

The comparative study of the DC parameters and RF power stability of nitride-based conventional HFETs and Metal-Oxide-Semiconductor HFETs (MOSHFETs) is presented. The average lifetime under DC stress is estimated to be as high as 2.5 years at room temperature. Under the large-signal RF stress, the gate leakage current of conventional HFETs increases significantly with time showing faster degradation as compared to DC stressing. MOSHFETs demonstrate superior RF performance stability, which perfectly correlates with the DC stability data. It is shown that in conventional HFETs, the combination of the self-heating and positive dynamic gate bias leads to the defect accumulation in the AlGaN barrier under the gate. In MOSHFETs, the absence of the gate leakage is a key to stable RF performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E6.4
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Khan, M.A., Van Hove, J.M., Kuznia, J.N., and Olsen, D.T., Appl. Phys. Lett., 58, 2408 (1991)Google Scholar
2. Ambacher, O., Smart, J., Shealy, J. R., Weimann, N. G., Chu, K., Murphy, M., Schaff, W. J., Eastman, L. F., Dimitrov, R., Wittmer, L., Stutzmann, M., Rieger, W. and Hilsenbeck, J., Journ Appl. Phys., 85, 3222 (1999)Google Scholar
3. Khan, M.A., Bhattarai, A., Kuznia, J.N., and Olson, D.T., Appl. Phys. Lett., 63, 1214 (1993)Google Scholar
4. Wu, Y.-F., Saxler, A., Moore, M., Smith, R.P., Sheppard, S., Chavarkar, P.M., Wisleder, T., Mishra, U.K., Parikh, P., IEEE Electron Dev. Lett., 25, 117 (2004)Google Scholar
5. Thompson, R., Prunty, T., Kaper, Val, and Shealy, J.R., IEEE Trans. on Electron Devices, 51, 292 (2004)Google Scholar
6. Trew, R. J., in Proceedings of the IEEE, 90, 1032 (2002)Google Scholar
7. Khan, M.A., Hu, X., Simin, G., Lunev, A., Yang, J., Gaska, R., and Shur, M.S., IEEE Electron Device Lett., 21, 63 (2000)Google Scholar
8. Adivarahan, V., Gaevski, M., Sun, W.H., Fatima, H., Koudymov, A., Saygi, S., Simin, G., Yang, J., and Asif Khan, M., IEEE Electron Device Lett., 24, 541 (2003)Google Scholar
9. Mehandru, R., Luo, B., Kim, J., Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C. R., Pearton, S.J., Gotthold, D., Birkhahn, B., Peres, B., Fitch, R‥C., Gillespie, J.K., Jenkins, T.J., Sewell, J., Via, G.D., and Crespo, A., Appl. Phys. Lett., 82,. 2530 (2003)Google Scholar
10. Saygi, S., Fatima, H., He, X., Rai, S., Koudymov, A., Adivarahan, V., Yang, J., Simin, G. and Asif, M. Khan, presented at International Workshop on Nitride Semiconductors, July 2004, Pittsburgh, PA (unpublished)Google Scholar
11. Koudymov, A., Fatima, H., Simin, G., Yang, J., Asif Khan, M., Tarakji, A., Hu, X., Shur, M.S. and Gaska, R., Appl. Phys. Lett., 80, 3216 (2002)Google Scholar
12. Shur, M.S., GaAs Devices and Circuits. Plenum Press, New York and London, 1987 Google Scholar
13. Koudymov, A., Simin, G., Asif Khan, M., Tarakji, A., Gaska, R., and Shur, M.S., IEEE Electron Dev. Lett., 24, 680–(2003)Google Scholar