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AlGaN/GaN based MOSHFETs with Different Gate Dielectrics and Treatments

Published online by Cambridge University Press:  21 March 2011

D. Mistele ,
T. Rotter ,
Z. Bougriouaa ,
I. Moermanna ,
K.S. Röver ,
M. Seyboth ,
V. Schwegler ,
J. Stemmer ,
F. Fedler  and
H. Klausing
...Show all authors
D. Mistele
Affiliation:
INTEC Ghent University – IMEC, St. Pietersnieuwstraat 41, B-9000 Ghent, Belgium
T. Rotter
Affiliation:
Laboratory for Information Technology, University of Hannover, Schneiderberg 32, D-30167 Hannover, Germany
Z. Bougriouaa
Affiliation:
Laboratory for Information Technology, University of Hannover, Schneiderberg 32, D-30167 Hannover, Germany
I. Moermanna
Affiliation:
Laboratory for Information Technology, University of Hannover, Schneiderberg 32, D-30167 Hannover, Germany
K.S. Röver
Affiliation:
Institute for Semiconductor Technology, University of Hannover, Appelstr.4A, D-30167 Hannover, Germany
M. Seyboth
Affiliation:
Department of Optoelectronics, University of Ulm, Albert-Einstein-Allee 45, 89071 Ulm, Germany
V. Schwegler
Affiliation:
Department of Optoelectronics, University of Ulm, Albert-Einstein-Allee 45, 89071 Ulm, Germany
J. Stemmer
Affiliation:
Laboratory for Information Technology, University of Hannover, Schneiderberg 32, D-30167 Hannover, Germany
F. Fedler
Affiliation:
Laboratory for Information Technology, University of Hannover, Schneiderberg 32, D-30167 Hannover, Germany
H. Klausing
Affiliation:
Laboratory for Information Technology, University of Hannover, Schneiderberg 32, D-30167 Hannover, Germany
O.K. Semchinova
Affiliation:
Laboratory for Information Technology, University of Hannover, Schneiderberg 32, D-30167 Hannover, Germany
J. Aderhold
Affiliation:
Laboratory for Information Technology, University of Hannover, Schneiderberg 32, D-30167 Hannover, Germany
J. Graul
Affiliation:
Laboratory for Information Technology, University of Hannover, Schneiderberg 32, D-30167 Hannover, Germany
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Abstract

AlGaN/GaN based hetero field effect transistors (HFETs) were capped with different dielectrics, characterized, and tested for DC performance. As dielectrics we use SiO2 and photoelectrochemical (PEC) grown AlxGa2-xO3. Combination of this two dielectrics show best performance with respect to gate leakage current and controllability of the drain current ID. TheMOSHEFTs work also at positive gate voltages in accumulation, which is also demonstrated in a broad transconductance peak. The PEC oxidation shows low density of interface states Dit and the insulating properties depend strongly on the PEC conditions. Pre-treatments before the SiO2 deposition result in varying threshold voltages |Vth| and it seems that (NH4)Sx pre-treatment leaves the surface in best conditions. Comparison of Ti/Al and Ti/Al/Ti/Au as source/drain contacts for AlGaN/GaN HFETs are done and the annealing behavior of Ti/Al/Ti/Au is displayed resulting in contact resistance as low as RC = 2 &mm after annealing at 850°C in N2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I6.51.1
Copyright
Copyright © Materials Research Society 2002

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Footnotes

*

Email: david.mistele@lfi.uni-hannover.de

**

current address: CRHEA-CNRS, Rue Bernard Gregory, 06560 Valbonne, France

References

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