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AlGaN Channel HEMT with Extremely High Breakdown Voltage

Published online by Cambridge University Press:  07 July 2011

Takuma Nanjo ,
Misaichi Takeuchi ,
Akifumi Imai ,
Yousuke Suzuki ,
Muneyoshi Suita ,
Katsuomi Shiozawa ,
Yuji Abe ,
Eiji Yagyu ,
Kiichi Yoshiara  and
Yoshinobu Aoyagi
Takuma Nanjo
Affiliation:
Mitsubishi Electric Corporation, Advanced Technology R & D Center, 8-1-1, Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, JAPAN
Misaichi Takeuchi
Affiliation:
Ritsumeikan Global Innovation Research Organization, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, JAPAN
Akifumi Imai
Affiliation:
Mitsubishi Electric Corporation, Advanced Technology R & D Center, 8-1-1, Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, JAPAN
Yousuke Suzuki
Affiliation:
Mitsubishi Electric Corporation, Advanced Technology R & D Center, 8-1-1, Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, JAPAN
Muneyoshi Suita
Affiliation:
Mitsubishi Electric Corporation, Advanced Technology R & D Center, 8-1-1, Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, JAPAN
Katsuomi Shiozawa
Affiliation:
Mitsubishi Electric Corporation, Advanced Technology R & D Center, 8-1-1, Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, JAPAN
Yuji Abe
Affiliation:
Mitsubishi Electric Corporation, Advanced Technology R & D Center, 8-1-1, Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, JAPAN
Eiji Yagyu
Affiliation:
Mitsubishi Electric Corporation, Advanced Technology R & D Center, 8-1-1, Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, JAPAN
Kiichi Yoshiara
Affiliation:
Mitsubishi Electric Corporation, Advanced Technology R & D Center, 8-1-1, Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, JAPAN
Yoshinobu Aoyagi
Affiliation:
Ritsumeikan Global Innovation Research Organization, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, JAPAN
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Abstract

A channel layer substitution of a wider bandgap AlGaN for a conventional GaN in high electron mobility transistors (HEMTs) is an effective method of enhancing the breakdown voltage. Wider bandgap AlGaN, however, should also increase the ohmic contact resistance. Si ion implantation doping technique was utilized to achieve sufficiently low resistive source/drain contacts. The fabricated AlGaN channel HEMTs with the field plate structure demonstrated good pinch-off operation with sufficiently high drain current density of 0.5 A/mm without noticeable current collapse. The obtained maximum breakdown voltages was 1700 V in the AlGaN channel HEMT with the gate-drain distance of 10 μm. These remarkable results indicate that AlGaN channel HEMTs could become future strong candidates for not only high-frequency devices such as low noise amplifiers but also high-power devices such as switching applications.

Keywords

compoundnitridesemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1324: Symposium D – Compound Semiconductors for Energy Applications and Environmental Sustainability , 2011 , mrss11-1324-d11-01
Copyright
Copyright © Materials Research Society 2011

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References

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