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ALD HfO2 surface preparation study

Published online by Cambridge University Press:  11 February 2011

Annelies Delabie ,
M. Caymax ,
J. W. Maes ,
P. Bajolet ,
B. Brijs ,
E. Cartier ,
T. Conard ,
S. De Gendt ,
O. Richard  and
W. Vandervorst
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Annelies Delabie
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
M. Caymax
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
J. W. Maes
Affiliation:
ASM Belgium, 75 Kapeldreef, B-3001 Leuven, Belgium
P. Bajolet
Affiliation:
ASM Belgium, 75 Kapeldreef, B-3001 Leuven, Belgium
B. Brijs
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
E. Cartier
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
T. Conard
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
S. De Gendt
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
O. Richard
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
W. Vandervorst
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
C. Zhao
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
M. Green
Affiliation:
International Sematech Assignee c/o IMEC.
W. Tsai
Affiliation:
International Sematech Assignee c/o IMEC.
M. M. Heyns
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
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Abstract

A fast screening technique is used to study the ALD HfO2 growth behavior on different types of starting surfaces (H-passivated, chemical oxide, thermal oxide). The amount of Hf deposited at the early stages of the ALD process is measured by means of RBS. The HfO2 film quality on different starting surfaces is examined with ToFSIMS. The results suggest an island growth mechanism on a H-terminated starting surface: nucleation, development of separated nuclei and flattening. It is shown that ALD growth starts faster if –OH groups are present on the surface. A remote H2 plasma surface pre-treatment at room temperature is also studied. The influence of the plasma exposure time and number of water pulses prior to HfO2 deposition was examined. The H2 plasma surface pre-treatment can be considered as a promising candidate for sub 1 nm EOT performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 745: Symposium N – Novel Materials and Processes for Advanced CMOS , 2002 , N5.11
Copyright
Copyright © Materials Research Society 2003

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References

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