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Al Doped Ta2O5 Thin Films for Microelectronic Applications

Published online by Cambridge University Press:  21 March 2011

P. C Joshi ,
M. W. Cole ,
C. W. Hubbard  and
E. Ngo
P. C Joshi
Affiliation:
US Army Research Laboratory, Weapons and Materials Research Directorate, Aberdeen Proving Ground, MD 21005, U.S.A.
M. W. Cole
Affiliation:
US Army Research Laboratory, Weapons and Materials Research Directorate, Aberdeen Proving Ground, MD 21005, U.S.A.
C. W. Hubbard
Affiliation:
US Army Research Laboratory, Weapons and Materials Research Directorate, Aberdeen Proving Ground, MD 21005, U.S.A.
E. Ngo
Affiliation:
US Army Research Laboratory, Weapons and Materials Research Directorate, Aberdeen Proving Ground, MD 21005, U.S.A.
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Abstract

In this paper, we report on the fabrication and characterization of pure and Al doped Ta2O5 thin films fabricated by metalorganic solution deposition (MOSD) technique. The pure and Aldoped Ta2O5 thin films were fabricated by spin-coating technique using room temperature processed carboxylate-alkoxide precursor solution. The structure of the films was analyzed by xray diffraction (XRD). The surface and cross-sectional morphology of the films were examined by field emission scanning electron microscope (FESEM) and atomic force microscope (AFM). The electrical measurements were conducted on films in MIM configuration using Pt as the top and bottom electrode. The effects of Al concentration and the post-deposition annealing temperature on the structural, dielectric, and insulating properties were analyzed. The effects of the applied bias and the measurement temperature on the dielectric and insulating properties were also analyzed to establish the stability and reliability of Al doped Ta2O5 thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 654: Symposia AA – Structure-Property Relationships of Oxide Surfaces & Interfaces , 2000 , AA7.10.1
Copyright
Copyright © Materials Research Society 2001

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