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Advances in Rtp Temperature Measurement and Control

Published online by Cambridge University Press:  10 February 2011

Bruce Peuse
Affiliation:
Applied Materials Thermal Processing Organization, 2727 Augustine Drive MS 0755, Santa Clara, CA 95054,USA, BrucePeuse@amat.com, Gary_Miner@amat.com, MarkYam@amat.com
Gary Miner
Affiliation:
Applied Materials Thermal Processing Organization, 2727 Augustine Drive MS 0755, Santa Clara, CA 95054,USA, BrucePeuse@amat.com, Gary_Miner@amat.com, MarkYam@amat.com
Mark Yam
Affiliation:
Applied Materials Thermal Processing Organization, 2727 Augustine Drive MS 0755, Santa Clara, CA 95054,USA, BrucePeuse@amat.com, Gary_Miner@amat.com, MarkYam@amat.com
Curtis Elia
Affiliation:
Oakleaf Engineering, Inc., 643 Bair Island Road, Suite 208, Redwood City, CA 94063, USA,elia@oakleaf.com
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Abstract

This paper reviews work to develop and improve the temperature measurement and control technology of a commercial rapid thermal processing (RTP) system. A description of the main features of this system is given, which includes a concentric multi-zone lamp heating source, multi-point temperature measurement system and real time wafer temperature control. Innovations in RTP optical thermometry are described which resulted in improved low temperature performance, a real time spectral emissivity measurement tool which enables emissivity independent temperature measurement and an improved temperature calibration capability. The multi-input multi-output (MIMO) optimal wafer temperature control methodology is discussed. Process results demonstrating an equivalent process temperature performance of 4°C, 3-sigma, all-points-all-wafers will be presented.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. National Technology Roadmap for Semiconductors, SIA Semiconductor Association, 1994.Google Scholar
2. Peuse, B., Yam, M., Bahl, S. and Elia, C. in 5th International Conference on Advanced Thermal Processing of Semiconductors - RTP'97, edited by Fair, R., Green, M., Lojek, B., Thakur, R., (RTP'97, Round Rock, TX, 1997), p. 358 Google Scholar
3. Gronet, C. and Gibbons, J., US Patent No. 5,155,336 (October 13, 1992).Google Scholar
4. Gronet, C. and Gibbons, J., US Patent No. 5,487,127 (January 23, 1996).Google Scholar
5. Schietinger, C. and Jensen, E. in Rapid Thermal Integrated Processing V, edited by J., Gelpey, M., Ozturk, T., Thakur, A., Fiory and F., Roozeboom (Mat. Res. Soc. Symp. Proc. 429, Pittsburgh, PA 1996), p. 283.Google Scholar
6. DeWitt, D. and Nutter, G., Theory and Practice of Radiation Thermometry, Wiley Interscience, New York, 1988, p. 21.Google Scholar
7. DeWitt, D. and Nutter, G., pg. 565 and pg. 653.Google Scholar
8. Peuse, B., Miner, G. and Yam, M., US Patent No. 5,660, 472 (August 26, 1997).Google Scholar
9. Yam, M., Rubinchik, A. and Peuse, B. in 5th In ternational Conference on Advanced Thermal Processing of Semiconductors - RTP'97, edited by R., Fair, M., Green, B., Lojek, R., Thakur, (RTP'97, Round Rock, TX, 1997), p. 102 Google Scholar
10. Elia, C. in Proceedings of American Control Conference, (Baltimore, Maryland, June 1994), pg. 907.Google Scholar