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Advances in Precursor Development for CVD of Bariumcontaining Materials

Published online by Cambridge University Press:  15 February 2011

Brian A. Vaartstra ,
R. A. Gardiner ,
D. C. Gordon ,
R. L. Ostrander  and
A. L. Rheingold
Brian A. Vaartstra
Affiliation:
Advanced Technology Materials Inc., 7 Commerce Dr., Danbury, CT 06810
R. A. Gardiner
Affiliation:
Advanced Technology Materials Inc., 7 Commerce Dr., Danbury, CT 06810
D. C. Gordon
Affiliation:
Advanced Technology Materials Inc., 7 Commerce Dr., Danbury, CT 06810
R. L. Ostrander
Affiliation:
University of Delaware, Department of Chemistry, Newark, DE 19716
A. L. Rheingold
Affiliation:
University of Delaware, Department of Chemistry, Newark, DE 19716
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Abstract

Barium titanate and barium-strontium titanate (BST) are high dielectric materials, likely to replace state-of-the-art capacitor materials for memory applications. Chemical Vapor Deposition (CVD) of these materials has been hampered, particularly by the lack of suitable precursors for barium. Although attempts to make volatile metal-organic barium compounds have met with some progress, a suitably stable, volatile barium source is still in demand. This paper will highlight recent developments at ATM, including syntheses and structures of polyamine and glycol ether adducts which have been designed to limit aggregation of barium diketonates, and stabilize the adducts with respect to ligand dissociation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 335: Symposium Y – Metal-Organic Chemical Vapor Deposition of Electronic Ceramics , 1993 , 203
Copyright
Copyright © Materials Research Society 1994

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